Gallium nitride (GaN) devices are revolutionarily advancing the efficiency, frequency, and
form factor of power electronics. However, the material composition, architecture, and …

This article aims to provide an update of the reliability aspects of research on power
electronic components and hardware systems. It introduces the latest advances in the …

Soft switching for both primary and secondary side devices is available by using LLC
converters. This resonant converter is an ideal candidate for today's high frequency, high …

This article presents a study on the short-circuit (SC) instability of p-doped gate gallium
nitride (p-GaN) high-electron-mobility transistors (HEMTs). Under SC condition, self …

The paper reports the results of a study based on experimental data and finite element
simulations about the failure mechanism of 650 V p-doped GaN power HEMT operated in …

The paper presents the results of a post failure analysis performed on commercial 650 V
GaN power HEMT after short circuit destructive tests. The used experiment set up includes a …

Seguendo la visione di un futuro verde e sostenibile, l'uso di semiconduttori di tipo Wide
Band Gap (WBG) nell'elettronica di potenza è di fondamentale importanza, poiché le loro …

In this article, a setup to characterize the failure mechanisms and degradation indicators of
gallium nitride (GaN) high-electron-mobility transistors (HEMTs) under short-circuit events is …

The use of a resistive shunt is one of the simplest and most used methods for measuring
current in an electronic device. Many researchers use this method to measure drain current …

In this article, a repetitive and non-destructive short-circuit aging test is developed to
characterize the electrical parameters evolutions of a 600 V GaN Gate Injection Transistor …