With the use of UV‐C radiation sterilizers on the rise in the wake of the recent pandemic, it
has become imperative to have health safety systems in place to curb the ill‐effects on …

Ga2O3 is attractive for power devices and solar-blind ultraviolet photodetectors due to its
ultra-wide bandgap, large breakdown field, and favorable stability. However, it is difficult to …

Ga2O3 with a suitable bandgap width is emerging to be a novel candidate for future
optoelectronic applications in the solar-blind region (< 280 nm). Herein, solar-blind …

This Perspective seeks to understand and assess why ultrawide bandgap (UWBG)
semiconductor-based deep-UV photodetectors have not yet found any noticeable presence …

Solar-blind ultraviolet (UV) photodetectors are greatly desired in a number of areas in terms
of military and civilian purposes, especially self-powered devices driven by the photovoltaic …

Cu2O is a promising p-type semiconductor for low-cost photovoltaics and transparent
optoelectronics. However, low-cost and low-temperature fabrication of Cu2O films with good …

Ultrawide bandgap (UWBG) semiconductors, including Ga2O3, diamond, Al x Ga1–x N/AlN,
featuring bandgaps greater than 4.4 eV, hold significant promise for solar-blind ultraviolet …

oriented ε-Ga 2 O 3 thin films were heteroepitaxially grown on p-Si (111) substrates by
metalorganic chemical vapor deposition (MOCVD). The introduction of Al 2 O 3 buffer layer …

Heterojunction photodetectors (PDs) with photovoltaic effect could play a crucial role in
future energy-conservation photoelectronic devices for their self-powered work manner …

High detectivity is essential for solar-blind deep-ultraviolet (DUV) light detection because the
DUV signal is extremely weak in most applications. In this work, we report ultrahigh …