Next-generation power converters are expected to be reduced in size, weight, and cost
while providing highly reliable operation over an extended lifetime with minimal ecological …

Bond wire degradation is one of the most common failure modes for wire-welded packaging
insulated-gate bipolar transistor (IGBT) modules. This article proposes a novel bond wire …

In pursuit of high power density and high reliability of power converters, the junction
temperature of power devices becomes an essential indicator for heath condition monitoring …

This paper presents a methodology for real-time monitoring of 3-D temperature distributions
and device losses within power electronic modules. It allows precise thermal management …

Fast and accurate online monitoring of junction temperature of insulated gate bipolar
transistor (IGBT) chips is of great significance for overtemperature protection and thermal …

This paper proposes a novel method for optimizing the Cauer-type thermal network model
considering both the temperature influence on the extraction of parameters and the errors …

In this paper, recording of acoustic emission during real operations is used for non-
invasively detecting the aging of a power seminconductor module due to power cycling. The …

Bond wire lift-off is one of the major failure mechanisms in the insulated gate bipolar
transistor (IGBT) modules. Detecting the fault of bond wires is important to avoid the open …

Bond-wire liftoff caused by mechanical stress due to thermal cycling is one of the major
failures in power electronic systems. Condition monitoring concepts which allow prediction …

This paper focuses on the degradation at the wire bond contact with the metalized pad, and
precisely its evolution with the power module aging. In order to induce damage in this …