Two-dimensional magnetic materials for spintronic devices

M Mi, H Xiao, L Yu, Y Zhang, Y Wang, Q Cao… - Materials Today Nano, 2023 - Elsevier
Spintronics is a promising technology to develop high-speed, high-density, low-power, and
nonvolatile memory and logic devices, and thus has attracted tremendous attention …

Two-dimensional magnetic Janus monolayers and their van der Waals heterostructures: a review on recent progress

J Jiang, W Mi - Materials Horizons, 2023 - pubs.rsc.org
A magnetic Janus monolayer, a special type of material which has asymmetric
arrangements of its surface at the nanoscale, has been shown to present rather exotic …

Monolayer : An intrinsic room-temperature ferrovalley semiconductor

K Sheng, Q Chen, HK Yuan, ZY Wang - Physical Review B, 2022 - APS
Two-dimensional ferrovalley semiconductors with robust room-temperature ferromagnetism
and sizable valley polarization hold great prospects for future miniature information storage …

Strain effects on the topological and valley properties of the Janus monolayer

SD Guo, WQ Mu, JH Wang, YX Yang, B Wang, YS Ang - Physical Review B, 2022 - APS
Strain is an effective method to tune the electronic properties of two-dimensional (2D)
materials and can induce novel phase transition. Recently, the 2D MA 2 Z 4 family of …

Strain-engineered topological phase transitions in ferrovalley monolayer

K Sheng, B Zhang, HK Yuan, ZY Wang - Physical Review B, 2022 - APS
Ferrovalley and topology are two basic concepts in both fundamental research fields and
emerging device applications. So far, reports are extremely scarce regarding the coupling of …

Spontaneous valley polarization and valley-nonequilibrium quantum anomalous Hall effect in Janus monolayer ScBrI

K Jia, XJ Dong, SS Li, WX Ji, CW Zhang - Nanoscale, 2023 - pubs.rsc.org
Topology and ferrovalley (FV) are two essential concepts in emerging device applications
and the fundamental research field. To date, relevant reports are extremely rare about the …

Realizing spontaneous valley polarization and topological phase transitions in monolayer ScX2 (X= Cl, Br, I)

Y Wu, J Tong, L Deng, F Luo, F Tian, G Qin, X Zhang - Acta Materialia, 2023 - Elsevier
Manipulating the valley degree of freedom besides the charge and spin has attracted
increasing interest in fundamental sciences and emerging applications. In this study, the …

Possible electronic state quasi-half-valley metal in a monolayer

SD Guo, YL Tao, HT Guo, ZY Zhao, B Wang, G Wang… - Physical Review B, 2023 - APS
One of the key problems in valleytronics is to realize valley polarization. Ferrovalley
semiconductors and half-valley metals (HVM) have been proposed, which possess intrinsic …

Valley-polarized quantum anomalous Hall insulator in monolayer

SD Guo, WQ Mu, BG Liu - 2D Materials, 2022 - iopscience.iop.org
The coexistence of an intrinsic ferrovalley (FV) and nontrivial band topology attracts
intensive interest, both for its fundamental physics and for its potential applications, namely a …

Distinct ferrovalley characteristics of the Janus RuClX (X= F, Br) monolayer

Y Ma, Y Wu, J Tong, L Deng, X Yin, L Zhou, X Han… - Nanoscale, 2023 - pubs.rsc.org
Two-dimensional ferrovalley materials should simultaneously possess three characteristics,
that is, a Curie temperature beyond atmospheric temperature, perpendicular magnetic …