The operating current regime is found to play a key role in determining the synaptic
characteristic of memristor devices. A conduction channel that is formed using high current …

Interdependency of switching voltage and time creates a dilemma/obstacle for most resistive
switching memories, which indicates low switching voltage and ultra‐fast switching time …

Electrically induced resistive switching is a subject of increasing scientific interest because it
is a candidate for universal non-volatile memory. We demonstrate resistive switching in a …

It is generally impossible in two-terminal devices to separate the resistance of the device
material from the parasitic resistance of terminals, interfaces, and serial loads, yet such …

采用溶胶-凝胶结合快速退火工艺在p+-Si 基片上制备了SrTiO3 薄膜, 构建了Ag/SrTiO3/p+-Si
结构的阻变器件, 研究了退火温度对薄膜微观结构, 阻变特性的影响. 结果表明 …

This thesis describes conductivity in amorphous semiconductors and insulators—some
doped with metals, in which elastic electrons can random walk across a transport length of …

Abstract The Mo/Si 3 N 4: Pt/Pt nanometallic resistive switching devices with ultra-fast
write/erase speed (< 50 ns) were fabricated. Other than conventional electrical switching, a …

Electrically induced resistive switching is a subject of increasing scientific interest because it
is a candidate for universal non-volatile memory. We demonstrate resistive switching in a …

HfO2 thin films were prepared on p+-Si substrates by magnetron sputtering combined with
annealing process, and the Ag/HfO2/p+-Si structured resistive storage cells were …

It is generally impossible to separately measure the resistance of the functional component
(ie, the intrinsic device materials) and the parasitic component (ie, terminals, interfaces and …