The characteristics of visible (λ∼ 550 nm) InGaN/GaN disk-in-nanowire array
photoconductive detectors have been measured and analyzed. The nanowire arrays are …

III-nitride nanowire diode heterostructures with multiple In 0.85 Ga 0.15 N disks and graded
InGaN mode confining regions were grown by molecular beam epitaxy on (001) Si …

In this paper a method is presented to accurately and quickly interpolate a dataset of the
complex refractive index of arbitrary compound semiconductors. The method is based on a …

The dislocation free In x Al 1-x N nanowires (NWs) are grown on Si (111) by nitrogen plasma
assisted molecular beam epitaxy in the temperature regime of 490 C–610 C yielding In …

The degradation characteristics of InGaN-based laser diodes (LDs) grown on Si substrate
have been studied under an electrical stress with a pulsed current of 180 mA. After the …

In x Ga 1− x N is a promising material for flexible and efficient water-splitting photoelectrodes
since the bandgap is tunable by modifying the indium content. We investigate the potential …

This letter reports room-temperature electrically pumped narrow-linewidth GaN-on-Si laser
diodes. Unlike conventional distributed Bragg feedback laser diodes with hundreds of …

Abstract Ga (Al, In) N nanowires can be grown catalyst-free on silicon and other substrates.
The diameter of individual nanowires in an array and the array density can be varied over …

Due to their tunable physical and chemical properties, alloys are of fundamental importance
in material science. The determination of stoichiometry is crucial for alloy engineering …

The efficient conversion of solar energy into storable, transportable chemical fuels is
believed to have the potential to solve many energy and environmental challenges. This is …