Improved breakdown voltage mechanism in AlGaN/GaN HEMT for RF/microwave applications: design and physical insights of dual field plate
This work investigated and proposed the source–gate dual field plate (SG-FP) AlGaN/GaN
HEMT for different gate-to-drain drift distances with a fixed gate length of 0.25 μ m using …
HEMT for different gate-to-drain drift distances with a fixed gate length of 0.25 μ m using …
Mole fraction effects on AlxGa1−xN/AlN/GaN MOSHEMT analog/RF performance: analytical model and simulation assessment
In this work, the authors have investigated and proposed an analytical model for different
mole fraction variation for the AlxGa1− xN/AlN/GaN MOSHEMT. The mole fraction …
mole fraction variation for the AlxGa1− xN/AlN/GaN MOSHEMT. The mole fraction …
Dual-coupling effect enables a high-performance self-powered UV photodetector
X Lin, L Wan, Z Chen, J Ren, S Lin, D Yuan, W Sun… - Optics …, 2024 - opg.optica.org
Self-powered ultraviolet photodetectors generally operate by utilizing the built-in electric
field within heterojunctions or Schottky junctions. However, the effectiveness of self-powered …
field within heterojunctions or Schottky junctions. However, the effectiveness of self-powered …
Sensitivity estimation of biosensor in a tapered cavity MOSHEMT
The present research provides a comprehensive investigation of the structural modification
at the cavity under the gate (CUG) on the metal oxide semiconductor high electron mobility …
at the cavity under the gate (CUG) on the metal oxide semiconductor high electron mobility …
Contact Material and Interface State Effects on AlGaN/GaN HEMT Characteristic and Performance
MJ Alam, H Sidhwa, S Giriprasad - … International Conference on …, 2024 - ieeexplore.ieee.org
Aluminum Gallium Nitride/Gallium Nitride (AlGaN/GaN) High Electron Mobility Transistors
(HEMTs) have gained significant attention for their superior electrical properties, making …
(HEMTs) have gained significant attention for their superior electrical properties, making …