Characterization of anisotropic wet etching of single-crystal sapphire
Y Xing, Z Guo, MA Gosalvez, G Wu, X Qiu - Sensors and Actuators A …, 2020 - Elsevier
Based on the use of a number of spherical samples of single-crystal sapphire, this paper
reports the etch rate characteristics of this material as a function of orientation during …
reports the etch rate characteristics of this material as a function of orientation during …
Transient and stable profiles during anisotropic wet etching of quartz
This paper presents a comprehensive analysis of the transient (short-term) and stable (long-
term) cross-sectional profiles of elongated trenches formed by anisotropic wet etching on Z …
term) cross-sectional profiles of elongated trenches formed by anisotropic wet etching on Z …
The maximum positive curvature recognition method to determine etch profiles in wet etching of quartz on AT and BT cuts
Y Xing, J Zhang, MA Gosálvez, H Zhang… - Journal of …, 2018 - ieeexplore.ieee.org
This paper presents a method to quickly determine the transient and stable profiles of
trenches, cavities, and mesas formed by anisotropic wet chemical etching on AT and BT cut …
trenches, cavities, and mesas formed by anisotropic wet chemical etching on AT and BT cut …
Investigation on spraying pressure in etching process of flexible printed circuit board (FPCB) with 18 μm line pitch
B Sun, D Yu, W Peng, Y Wang, R Ming… - Engineering Research …, 2024 - iopscience.iop.org
In the wet etching process of the flexible printed circuit board (FPCB), to obtain a better
etching profile and improve the yield, it is necessary to control the etching spraying pressure …
etching profile and improve the yield, it is necessary to control the etching spraying pressure …
Level Set Simulation of Surface Evolution in Anisotropic Wet Etching of Patterned Sapphire Subtrate
J Zhang, Y Xing, MA Gosálvez, X Qiu… - 2019 IEEE 32nd …, 2019 - ieeexplore.ieee.org
The performance of GaN-based Light Emitting Diode (LED) devices may be significantly
improved by optimizing the use of maskless growth of GaN layers directly on the sidewalls of …
improved by optimizing the use of maskless growth of GaN layers directly on the sidewalls of …