Influence of frequency and gamma irradiation on the electrical characteristics of Er2O3, Gd2O3, Yb2O3, and HfO2 MOS-based devices
The unique physical, chemical, and electronic properties of rare earth oxides have been of
immense interest to replace SiO 2 as a dielectric material in metal–oxide–semiconductor …
immense interest to replace SiO 2 as a dielectric material in metal–oxide–semiconductor …
Dielectric properties of MS diodes with Ag: ZnO doped PVP interfacial layer depending on voltage and frequency
This study focused on the complex dielectric-constant (ε*= ε′-jε''), complex electrical-
modulus (M*= Μ'+ Μ''), and ac electrical-conductivity (σ ac) of MS diodes with (Ag: ZnO)-PVP …
modulus (M*= Μ'+ Μ''), and ac electrical-conductivity (σ ac) of MS diodes with (Ag: ZnO)-PVP …
Radiation Response of HfOx-Based Resistive Random Access Memory (RRAM) Devices
A report on the fabrication and radiation response of HfO x thin film-based resistive random
access memory (RRAM) devices is presented in this study. Au/HfO x/Au cross-bar (10 μm× …
access memory (RRAM) devices is presented in this study. Au/HfO x/Au cross-bar (10 μm× …
Evaluation of Radiation Sensor Aspects of MOS Capacitors under Zero Gate Bias
The aim of the present study is to investigate the usage of Erbium Oxide (Er 2 O 3) as a gate
dielectric in MOS-based radiation sensors. Er 2 O 3 thin films were deposited on a p-type Si …
dielectric in MOS-based radiation sensors. Er 2 O 3 thin films were deposited on a p-type Si …
Radiation sustenance of HfO2/β-Ga2O3 metal-oxide-semiconductor capacitors: gamma irradiation study
N Manikanthababu, BR Tak, K Prajna… - Semiconductor …, 2020 - iopscience.iop.org
Abstract β-Ga 2 O 3 is an interesting new generation wide bandgap semiconductor for
power device applications. The gamma irradiation was performed on the HfO 2/β-Ga 2 O 3 …
power device applications. The gamma irradiation was performed on the HfO 2/β-Ga 2 O 3 …
Radiation tolerance, charge trapping, and defect dynamics studies of ALD-grown Al/HfO2/Si nMOSCAPs
The radiation response, long-term performance, and reliability of HfO 2-based gate dielectric
materials play a critical role in metal oxide semiconductor (MOS) technology for space …
materials play a critical role in metal oxide semiconductor (MOS) technology for space …
SHI induced effects on the electrical and optical properties of HfO2 thin films deposited by RF sputtering
The continuous downscaling of Metal Oxide Semiconductor (MOS) devices has reached a
limit with SiO 2 as a gate dielectric material. Introducing high-k dielectric materials as a …
limit with SiO 2 as a gate dielectric material. Introducing high-k dielectric materials as a …
Effects of swift heavy ion irradiation on the performance of HfO2-based resistive random access memory devices
In this work, the effects of 120 MeV Ag ion irradiation on the switching properties of Au/HfO
2/Au-based Resistive Random Access Memory (RRAM) devices are reported. The ion …
2/Au-based Resistive Random Access Memory (RRAM) devices are reported. The ion …
FET-based radiation sensors with Er2O3 gate dielectric
Pre-irradiation device characteristics, gamma radiation response, and possible use in
radiation dosimetry have been investigated for MOSFETs with a 100 nm thick Er 2 O 3 gate …
radiation dosimetry have been investigated for MOSFETs with a 100 nm thick Er 2 O 3 gate …
Study of γ-ray irradiation influence on TiN/HfO2/Si MOS capacitor by CV and DLTS
Y Li, Y Ma, W Lin, P Dong, Z Yang, M Gong, J Bi… - Superlattices and …, 2018 - Elsevier
Abstract Gamma-ray (γ-ray) irradiation effects on HfO 2-based MOS capacitors have been
studied. The capacitance-voltage (CV) characteristic was measured at room temperature …
studied. The capacitance-voltage (CV) characteristic was measured at room temperature …