Review of Si-based GeSn CVD growth and optoelectronic applications
Y Miao, G Wang, Z Kong, B Xu, X Zhao, X Luo, H Lin… - Nanomaterials, 2021 - mdpi.com
GeSn alloys have already attracted extensive attention due to their excellent properties and
wide-ranging electronic and optoelectronic applications. Both theoretical and experimental …
wide-ranging electronic and optoelectronic applications. Both theoretical and experimental …
Heterogeneous wafer bonding technology and thin-film transfer technology-enabling platform for the next generation applications beyond 5G
Wafer bonding technology is one of the most effective methods for high-quality thin-film
transfer onto different substrates combined with ion implantation processes, laser irradiation …
transfer onto different substrates combined with ion implantation processes, laser irradiation …
Steep-slope hysteresis-free negative capacitance MoS2 transistors
The so-called Boltzmann tyranny defines the fundamental thermionic limit of the
subthreshold slope of a metal–oxide–semiconductor field-effect transistor (MOSFET) at 60 …
subthreshold slope of a metal–oxide–semiconductor field-effect transistor (MOSFET) at 60 …
Sub-thermionic, ultra-high-gain organic transistors and circuits
The development of organic thin-film transistors (OTFTs) with low power consumption and
high gain will advance many flexible electronics. Here, by combining solution-processed …
high gain will advance many flexible electronics. Here, by combining solution-processed …
Negative Capacitance FET With 1.8-nm-Thick Zr-Doped HfO2 Oxide
We report on negative capacitance FETs (NCFETs) with a 1.8-nm-thick Zr-doped HfO 2 gate
oxide layer fabricated on an FDSOI wafer. Hysteresis-free operation is demonstrated. When …
oxide layer fabricated on an FDSOI wafer. Hysteresis-free operation is demonstrated. When …
Numerical investigation of short-channel effects in negative capacitance MFIS and MFMIS transistors: Subthreshold behavior
We present a detailed TCAD analysis of the impact of length scaling and the associated
short-channel effects in the subthreshold regime of the two classes of double-gate negative …
short-channel effects in the subthreshold regime of the two classes of double-gate negative …
Negative capacitance transistors
JC Wong, S Salahuddin - Proceedings of the IEEE, 2018 - ieeexplore.ieee.org
In recent years, the negative capacitance effect in ferroelectric (FE) materials has attracted
significant attention from many researchers around the world. The negative capacitance …
significant attention from many researchers around the world. The negative capacitance …
Integration of ferroelectric materials: an ultimate solution for next-generation computing and storage devices
R Khosla, SK Sharma - ACS applied electronic materials, 2021 - ACS Publications
Over the decades since ferroelectricity was revealed, ferroelectric materials have emerged
as a cornerstone for a wide spectrum of semiconductor technology and electronic device …
as a cornerstone for a wide spectrum of semiconductor technology and electronic device …
Physical insights on negative capacitance transistors in nonhysteresis and hysteresis regimes: MFMIS versus MFIS structures
We present a comprehensive comparison of the two different types of ferroelectric negative
capacitance FET (NCFET) structures: metal-ferroelectric-metal-insulator-semiconductor …
capacitance FET (NCFET) structures: metal-ferroelectric-metal-insulator-semiconductor …
Steep-Slope WSe2 Negative Capacitance Field-Effect Transistor
P-type two-dimensional steep-slope negative capacitance field-effect transistors are
demonstrated for the first time with WSe2 as channel material and ferroelectric hafnium …
demonstrated for the first time with WSe2 as channel material and ferroelectric hafnium …