Due to low power consumption, tunable wavelength and long lifetime ultraviolet light‐
emitting diodes (UV LEDs) have found many applications in different fields such as health …

AlGaN-based UV-A LEDs have wide applications in medical treatment and chemical
sensing; however, their efficiencies are still far behind visible LEDs or even shorter …

For III‐nitride‐based devices, such as high‐brightness light‐emitting diodes (LEDs), the poor
heat dissipation of the sapphire substrate is deleterious to the energy efficiency and restricts …

Abstract Commonly, the Al-rich AlGaN layer acts as electron blocking layer (EBL) to block
the overflow of electrons from the active region in conventional AlGaN deep-ultraviolet …

In order to improve the performance of deep ultraviolet light-emitting diodes (UV LEDs), the
effects of different electron blocking layers (EBLs) on the performance of Al x Ga 1-x N …

In this Letter, the characteristics of the AlGaN-based near-ultraviolet light-emitting diodes
with a band-engineering last quantum barrier (LQB) were analyzed experimentally and …

The properties of AlGaN-based deep-ultraviolet light-emitting diodes with AlInGaN/AlInGaN
superlattices (SLs) electron blocking layer (EBL) were studied numerically. When the …

In this study, we investigate the local structure of aluminum (Al) in a comprehensive series of
Al x Ga 1− x N epilayers, where the Al concentration spans from the dilute limit to 100%. We …

Although great progress has been made in InGaN/AlGaN ultraviolet light-emitting diodes
(UV LEDs), their quantum efficiency is still suffering from severe electron leakage and poor …

US8962359B2 - Photon extraction from nitride ultraviolet light-emitting devices - Google Patents
US8962359B2 - Photon extraction from nitride ultraviolet light-emitting devices - Google Patents …