Phosphor-converted white light-emitting diodes (pc-WLEDs) are emerging as an
indispensable solid-state light source for the next generation lighting industry and display …

The need for efficient, compact and robust solid-state UV optical sources and sensors had
stimulated the development of optical devices based on III–nitride material system. Rapid …

We report on the fabrication and characterization of AlGaN-based deep ultraviolet light-
emitting diodes (LEDs) with the emission wavelength ranging from 255 to 280 nm …

In order to realize 250–350-nm-band high-efficiency deep ultraviolet (UV) emitting devices
using group-III-nitride materials, it is necessary to obtain high-efficiency UV emission from …

This paper provides a brief overview on recent advances in tackling the doping and optical
polarization issues involved in the development of high performance deep ultraviolet (DUV) …

III-V compound semiconductor-based light emitting devices (LEDs) operating in ultraviolet to
visible wavelength ranges are greatly important for their applications, including displays …

To date, semiconductor light emitting diodes (LEDs) operating in the deep ultraviolet (UV)
spectral range exhibit very low efficiency due to the presence of large densities of defects …

A trichromatic phosphor-free white light-emitting diode (LED) has been implemented by
using adhesive bonding scheme. The device has been operated as a three-terminal device …

We report on a significant decrease in the diode-ideality factor of GaInN/GaN multiple
quantum well light-emitting diodes (LEDs), from 5.5 to 2.4, as Si-doping is applied to an …

We report on high performance Al x Ga 1− x N-based solar-blind ultraviolet photodetector
(PD) array grown on sapphire substrate. First, high quality, crack-free AlN template layer is …