Abstract Gallium oxide (Ga 2 O 3) is an ultrawide-bandgap semiconductor material that has
gained attention in recent years owing to its potential applications in optoelectronic devices …

Developing a photoelectric detector with independent power, compactness, and high
environmental sensitivity is a key step to realize the energy-saving and sustainable …

The MSM structures based on high-quality 1.6--thick-gallium oxide (Ga2O3) films grown by
the halide vapor phase epitaxy with Ti/Ni interdigital contacts were developed for the …

As an indirect-bandgap material, diamond owns an inter-band transition absorption
belonging to the phonon-assisted indirect transition process whose image is complex due to …

Phosphorescence is a basic luminescence phenomenon that is represented by continuous
light emission for a period after materials have absorbed excitation energy. Here, an obvious …

Monoclinic gallium oxide (β-Ga 2 O 3) has attracted much attention from the fields of
optoelectronic and electronic devices owing to the properties of wide bandgap, great …

The development of an etching process with controllable etching rate and high selectivity is
key to fabricating high-performance electronic and optoelectronic devices. In this paper, we …

In this work, the eXtended finite element method (XFEM) is implemented for the multiphysics
analysis of edge dislocations near a heterostructure (bi-material) interface with nonuniform …

Ultrawide bandgap ZnGa 2 O 4 (ZGO) thin films were grown on sapphire (0001) substrates
at various growth temperatures with a perspective to investigate the electrical and optical …

Heavily Sn-doped films of α-Ga 2 O 3 were grown by halide vapor phase epitaxy (HVPE) on
basal plane c-sapphire and on (10-12) r-sapphire substrates with and without α-Cr 2 O 3 thin …