Design of 0.8 V, 22 nm DG-FinFET based efficient VLSI multiplexers
Conventional CMOS has become successful logic for most digital VLSI circuits and a good
candidate in terms of power dissipation. But due to its dual nature, more transistors are …
candidate in terms of power dissipation. But due to its dual nature, more transistors are …
3D numerical simulations of single-event transient effects in SOI FinFETs
Z Wu, B Zhu, T Yi, C Li, Y Liu, Y Yang - Journal of Computational …, 2018 - Springer
The characteristics and mechanism of single-event transients in silicon-on-insulator (SOI) fin
field-effect transistors (FinFETs) were analyzed using Sentaurus technology computer-aided …
field-effect transistors (FinFETs) were analyzed using Sentaurus technology computer-aided …
Research of transient radiation effects on finfet srams compared with planar srams
JB Hao, Y Liu, ZJ Wang - … on Solid-State and Integrated Circuit …, 2016 - ieeexplore.ieee.org
This paper presents an analysis of transient radiation-induced soft error of FinFET SRAMs
compared to planar SRAMs. For this purpose, we propose an simulation approach starting …
compared to planar SRAMs. For this purpose, we propose an simulation approach starting …