Corrosive engineering assisted in situ construction of an Fe–Ni-based compound for industrial overall water-splitting under large-current density in alkaline freshwater …

Y Wang, W Yu, B Zhou, W Xiao, J Wang… - Journal of Materials …, 2023 - pubs.rsc.org
As a practical approach for hydrogen generation, electrolysis water-splitting, particularly in
seawater, is considered an attractive technique. Herein, an Fe–Ni based compound on a …

Multiple effects of hydrogen on InGaZnO thin-film transistor and the hydrogenation-resistibility enhancement

W Pan, Y Wang, Y Wang, Z Xia, FSY Yeung… - Journal of Alloys and …, 2023 - Elsevier
As the most common external dopant of amorphous oxide semiconductors (AOSs), the
hydrogen (H) exhibits great influences on the performance of AOS thin-film transistors (TFTs) …

Engineering a subnanometer interface tailoring layer for precise hydrogen incorporation and defect passivation for high-end oxide thin-film transistors

JB Ko, SI Cho, SHK Park - ACS Applied Materials & Interfaces, 2023 - ACS Publications
Top-gate self-aligned structured oxide thin-film transistors (TFTs) are suitable for the
backplanes of high-end displays because of their low parasitic capacitances. The gate …

Effects of hydrogen plasma treatment on the electrical performances and reliability of InGaZnO thin-film transistors

A Abliz - Journal of Alloys and Compounds, 2020 - Elsevier
In this work, we have investigated the effects of hydrogen (H) plasma treatment on the
electrical performances and reliability of amorphous InGaZnO (a-IGZO) thin film transistors …

Effect of the gate dielectric layer of flexible InGaZnO synaptic thin-film transistors on learning behavior

S Park, JT Jang, Y Hwang, H Lee… - ACS Applied …, 2021 - ACS Publications
In this work, flexible InGaZnO (IGZO) synaptic thin-film transistors (TFTs) with different gate
dielectric layers are fabricated and analyzed to investigate the effect of the gate insulator of …

Cation composition-dependent device performance and positive bias instability of self-aligned oxide semiconductor thin-film transistors: Including oxygen and …

JT Jang, D Kim, JH Baeck, JU Bae, J Noh… - … Applied Materials & …, 2022 - ACS Publications
Amorphous oxide semiconductor transistors control the illuminance of pixels in an
ecosystem of displays from large-screen TVs to wearable devices. To satisfy application …

Effect of hydrogen plasma treatment on the sensitivity of ZnO based electrochemical non-enzymatic biosensor

DB Tolubayeva, LV Gritsenko, YY Kedruk… - Biosensors, 2023 - mdpi.com
Information on vitamin C—ascorbic acid (AA)—content is important as it facilitates the
provision of dietary advice and strategies for the prevention and treatment of conditions …

Stabilization of the surface of ZnO films and elimination of the aging effect

KA Abdullin, MT Gabdullin, SK Zhumagulov… - Materials, 2021 - mdpi.com
Zinc oxide is a promising multifunctional material. The practical use of nano-and
polycrystalline ZnO devices faces a serious problem of instability of electrical and …

Observation of hydrogen-related defect in subgap density of states and its effects under positive bias stress in amorphous InGaZnO TFT

JT Jang, D Ko, SJ Choi, DM Kim… - IEEE Electron Device …, 2021 - ieeexplore.ieee.org
In amorphous oxide semiconductors, hydrogen-related defects have been unable to be
observed from the electrical characteristics of thin-film transistors (TFTs) in comparison to …

The significance on structural modulation of buffer and gate insulator for ALD based InGaZnO TFT applications

WH Choi, K Kim, SG Jeong, JH Han… - … on Electron Devices, 2021 - ieeexplore.ieee.org
Atomic layer deposition (ALD) has been studied extensively to employ oxide semiconductor
thin film transistor (TFT) including both active layer and gate insulator (GI). Herein, we …