Gate-mesa trench enables enhanced β-Ga2O3 MOSFET with higher power figure of merit
Y Zhang, S Luan - Engineering Research Express, 2023 - iopscience.iop.org
In this article, a gate-mesa trench (GMT) β-Ga 2 O 3 metal-oxide-semiconductor field-effect
transistor (MOSFET) device with enhanced performance and breakdown voltage …
transistor (MOSFET) device with enhanced performance and breakdown voltage …