Study on the processing outcomes of the atomic force microscopy tip-based nanoscratching on GaAs

J Wang, Y Yan, B Jia, Y Geng - Journal of Manufacturing Processes, 2021 - Elsevier
Nanostructures on GaAs have drawn significant attention because of their applications in
photodetectors, photoemitter devices and emerging quantum devices. However, how to …

[HTML][HTML] Oblique nanomachining of gallium arsenide explained using AFM experiments and MD simulations

P Fan, NK Katiyar, S Goel, Y He, Y Geng, Y Yan… - Journal of Manufacturing …, 2023 - Elsevier
Abstract Gallium Arsenide (GaAs) continues to remain a material of significant importance
due to being a preferred semiconductor substrate for the growth of quantum dots (QDs) and …

A 2.2 to 2.9 GHz complementary class-C VCO with PMOS tail-current source feedback achieving–120 dBc/Hz phase noise at 1 MHz offset

P Shasidharan, H Ramiah, J Rajendran - IEEE Access, 2019 - ieeexplore.ieee.org
The performance of low-powered transceivers is required to meet stringent specifications for
an advanced wireless radio application. It is critical for a voltage-controlled oscillator (VCO) …

Codesign of a-Band Integrated GaAs PIN Diodes Limiter and Low Noise Amplifier

L Yang, LA Yang, T Rong, Y Li, Z Jin, Y Hao - IEEE Access, 2019 - ieeexplore.ieee.org
In this paper, a novel concurrent design of integrated PIN-diode based limiter and low noise
amplifier (LNA) is presented for Ka-band MMICs fabricated using a combined PIN/0.15-μm …

A 0.8 mm2 Sub-GHz GaAs HBT Power Amplifier for 5G Application Achieving 57.5% PAE and 28.5 dBm Maximum Linear Output Power

RS Nitesh, J Rajendran, H Ramiah, BS Yarman - IEEE Access, 2019 - ieeexplore.ieee.org
This paper presents a comprehensive design of a fully integrated multistage GaAs HBT
power amplifier that achieves both linearity and high efficiency within a chip area of 0.855 …

A 1.7-to-2.7 GHz 35–38% PAE multiband CMOS power amplifier employing a digitally-assisted analog pre-distorter (DAAPD) reconfigurable linearization technique

S Mariappan, J Rajendran, Y Chen… - … on Circuits and …, 2021 - ieeexplore.ieee.org
This brief presents a CMOS power amplifier (PA) employing a digitally-assisted analog pre-
distorter (DAAPD) reconfigurable linearization technique to reduce the back-off output power …

A simulated investigation of ductile response of GaAs in single-point diamond turning and experimental validation

P Fan, F Ding, X Luo, Y Yan, Y Geng… - Nanomanufacturing and …, 2020 - Springer
In this paper, molecular dynamic (MD) simulation was adopted to study the ductile response
of single-crystal GaAs during single-point diamond turning (SPDT). The variations of cutting …

Design and Micro-Nano Fabrication of a GaAs-Based On-Chip Miniaturized Bandpass Filter with Intertwined Inductors and Circinate Capacitor Using Integrated …

J Chen, BH Zhu, S Yang, W Yue, DM Lee, ES Kim… - Nanomaterials, 2022 - mdpi.com
In this study, we propose a miniaturized bandpass filter (BPF) developed by combining an
approximate circular (36-gon) winding inductor, a circinate capacitor, and five air-bridge …

QFN-packaged bandpass filter with intertwined circular spiral inductor and integrated center-located capacitors using integrated passive device technology

ZJ Wang, ES Kim, JG Liang, NY Kim - IEEE Access, 2019 - ieeexplore.ieee.org
This paper describes the implementation of a miniaturized quad flat no-lead (QFN)-
packaged bandpass filter (BPF) with a combination of an intertwined circular spiral inductor …

A 919 MHz—923 MHz, 21 dBm CMOS power amplifier with bias modulation linearization technique achieving PAE of 29% for LoRa application

AS Rawat, J Rajendran, S Mariappan… - IEEE …, 2022 - ieeexplore.ieee.org
This paper presents a bias modulation linearization technique for a 919 MHz− 923 MHz
CMOS power amplifier which employs driver voltage modulation and main amplifier split …