Study on the processing outcomes of the atomic force microscopy tip-based nanoscratching on GaAs
J Wang, Y Yan, B Jia, Y Geng - Journal of Manufacturing Processes, 2021 - Elsevier
Nanostructures on GaAs have drawn significant attention because of their applications in
photodetectors, photoemitter devices and emerging quantum devices. However, how to …
photodetectors, photoemitter devices and emerging quantum devices. However, how to …
[HTML][HTML] Oblique nanomachining of gallium arsenide explained using AFM experiments and MD simulations
Abstract Gallium Arsenide (GaAs) continues to remain a material of significant importance
due to being a preferred semiconductor substrate for the growth of quantum dots (QDs) and …
due to being a preferred semiconductor substrate for the growth of quantum dots (QDs) and …
A 2.2 to 2.9 GHz complementary class-C VCO with PMOS tail-current source feedback achieving–120 dBc/Hz phase noise at 1 MHz offset
The performance of low-powered transceivers is required to meet stringent specifications for
an advanced wireless radio application. It is critical for a voltage-controlled oscillator (VCO) …
an advanced wireless radio application. It is critical for a voltage-controlled oscillator (VCO) …
Codesign of a-Band Integrated GaAs PIN Diodes Limiter and Low Noise Amplifier
L Yang, LA Yang, T Rong, Y Li, Z Jin, Y Hao - IEEE Access, 2019 - ieeexplore.ieee.org
In this paper, a novel concurrent design of integrated PIN-diode based limiter and low noise
amplifier (LNA) is presented for Ka-band MMICs fabricated using a combined PIN/0.15-μm …
amplifier (LNA) is presented for Ka-band MMICs fabricated using a combined PIN/0.15-μm …
A 0.8 mm2 Sub-GHz GaAs HBT Power Amplifier for 5G Application Achieving 57.5% PAE and 28.5 dBm Maximum Linear Output Power
RS Nitesh, J Rajendran, H Ramiah, BS Yarman - IEEE Access, 2019 - ieeexplore.ieee.org
This paper presents a comprehensive design of a fully integrated multistage GaAs HBT
power amplifier that achieves both linearity and high efficiency within a chip area of 0.855 …
power amplifier that achieves both linearity and high efficiency within a chip area of 0.855 …
A 1.7-to-2.7 GHz 35–38% PAE multiband CMOS power amplifier employing a digitally-assisted analog pre-distorter (DAAPD) reconfigurable linearization technique
This brief presents a CMOS power amplifier (PA) employing a digitally-assisted analog pre-
distorter (DAAPD) reconfigurable linearization technique to reduce the back-off output power …
distorter (DAAPD) reconfigurable linearization technique to reduce the back-off output power …
A simulated investigation of ductile response of GaAs in single-point diamond turning and experimental validation
In this paper, molecular dynamic (MD) simulation was adopted to study the ductile response
of single-crystal GaAs during single-point diamond turning (SPDT). The variations of cutting …
of single-crystal GaAs during single-point diamond turning (SPDT). The variations of cutting …
Design and Micro-Nano Fabrication of a GaAs-Based On-Chip Miniaturized Bandpass Filter with Intertwined Inductors and Circinate Capacitor Using Integrated …
In this study, we propose a miniaturized bandpass filter (BPF) developed by combining an
approximate circular (36-gon) winding inductor, a circinate capacitor, and five air-bridge …
approximate circular (36-gon) winding inductor, a circinate capacitor, and five air-bridge …
QFN-packaged bandpass filter with intertwined circular spiral inductor and integrated center-located capacitors using integrated passive device technology
This paper describes the implementation of a miniaturized quad flat no-lead (QFN)-
packaged bandpass filter (BPF) with a combination of an intertwined circular spiral inductor …
packaged bandpass filter (BPF) with a combination of an intertwined circular spiral inductor …
A 919 MHz—923 MHz, 21 dBm CMOS power amplifier with bias modulation linearization technique achieving PAE of 29% for LoRa application
This paper presents a bias modulation linearization technique for a 919 MHz− 923 MHz
CMOS power amplifier which employs driver voltage modulation and main amplifier split …
CMOS power amplifier which employs driver voltage modulation and main amplifier split …