Abstract Gallium oxide (Ga 2 O 3) is an ultrawide-bandgap semiconductor material that has
gained attention in recent years owing to its potential applications in optoelectronic devices …

In this work, by controlling the oxygen flow rate (OFR)(from 0% to 30%), we suggest using a
p-type copper aluminum oxide (p-CuAlO 2) interlayer to enhance the high breakdown and …

Abstract Gallium oxide (Ga 2 O 3), as a new kind of ultra− wide band gap semiconductor
material, is widely studied in many fields, such as power electronics, UV− blind …

Beta-gallium oxide (β-Ga 2 O 3)-based heterojunction photodetectors (HJPDs) based on pn
heterojunction have drawn a lot of attention since p-type doping of β-Ga 2 O 3 is challenging …

In this study, we propose and investigate a novel sandwich structure composed of Ni x O/SiN
x/Ga 2 O 3 for the purpose of enhancing the forward current density and reducing the on …

Beta-gallium oxide (β-Ga2O3) is emerging as a promising ultrawide band gap (UWBG)
semiconductor, which is vital for high-power, high-frequency electronics and deep-UV …

An innovative dual-step nitrogen (N2) ambient was introduced for growth and post-
deposition annealing of gallium oxide (Ga2O3) films at various temperatures (600, 700, 800 …

We investigated the electrical properties and defects of β-Ga 2 O 3 epilayers grown at
different growth rates on Sn-doped β-Ga 2 O 3 substrates by hydride vapor phase epitaxy …

This paper provides a comprehensive overview of the influence of 1-Butyl-1-
Methylpyrrolidinium Trifluoromethanesulfonate (BMPyrrOTf)-ionic liquid on a new polymer …

P-type oxide semiconductors with high p-type conductivity and visible transparency are
highly desired for various electronic devices. However, achieving these two demands is …