忆阻器是除电阻, 电容, 电感之外发现的第4 种基本电子元件, 它是一种具有记忆特性的非线性
器件, 可用于混沌, 存储器, 神经网络等电路与系统的实现. 该文对基于忆阻器的混沌电路 …

Memristor is the fourth basic electronic component in addition to resistor, capacitor and
inductor. It is a nonlinear device with memory characteristics, which can be used to design …

This article proposes a Configurable Memristive Logic Block (CMLB) that comprises of novel
memristive logic cells. The memristive logic cells are constructed from memristive D flip-flop …

The demand for low-power devices in today's world is increasing, and the reason behind
this is scaling CMOS technology. Due to scaling, the size of the chip decreases and the …

为拓广离散忆阻器的研究与应用, 基于差分算子, 构建了具有平方非线性的离散忆阻模型,
并实现了Simulink 仿真. 仿真结果表明, 设计的忆阻器满足广义忆阻定义. 将得到的离散忆阻引入 …

The performance of Static Nanomaterials Random-Access Memories (SRAMs) is often
degraded in the sub-threshold region as it is susceptible to increased access energy and …

This research investigates, for the first time, a novel eight-transistor-two-memristor (8T2M)
nonvolatile static random access memory (NVSRAM) with 7-nm technology. The key …

Cells for Random Access Memory (RAM) are extensively utilized in many modern electronic
devices. One of the difficult aspects of building Static Random Access Memory (SRAM) cells …

This work aims to improve the total power dissipation, leakage currents and stability without
disturbing the logic state of SRAM cell with concept called sub-threshold operation. Though …

忆感器是一种具有非线性特性的记忆元件, 是记忆元器件家族中的重要一员.
忆感器的研究主要集中在时域特性的分析上, 而频域特性的研究还没有开展 …