We report on the growth of monoclinic β-and orthorhombic κ-phase Ga 2 O 3 thin films using
liquid-injection metal-organic chemical vapor deposition on highly thermally conductive 4H …

Effective heat dissipation is the bottleneck problem for the development and
commercialization of GaN-based high-power electronic and photonic devices. To address …

In recent years, tremendous efforts have been dedicated to GaN high electron mobility
transistors (HEMTs) for high-power and high-frequency applications. In general, the …

In this work, a hybrid simulation technique is introduced for the electrothermal study of a two-
dimensional GaN-on-SiC high electron mobility transistor. Detailed electron and phonon …

The main objective of our paper is to propose an approach to studying the mechatronic
system's reliability through the reliability of their high electron mobility transistors (HEMT) …

Exact assessment of self-heating is of great importance to the thermal management of
electronic devices, especially when completely considering the cross-scale heat conduction …

This article presents a hybrid artificial intelligence (AI)-thermal model for the determination of
the current and lattice temperature of a device under a given bias voltage. The model is …

We report on the modeling of self-heating in GaN-based devices. While a constant thermal
resistance is able to account for the self-heating effects at low power, the decrease of the …

The modeling of self-heating in GaN-based devices is presented in this paper. A setup for
DC I–V and short pulse I–V was used to characterize the device. This paper used four …

Cryogenic low-noise amplifiers based on high electron mobility transistors (HEMTs) are
widely used in applications such as radio astronomy, deep space communications, and …