Heteroepitaxial growth of Ga2O3 on 4H-SiC by liquid-injection MOCVD for improved thermal management of Ga2O3 power devices

F Hrubišák, K Hušeková, X Zheng, A Rosová… - Journal of Vacuum …, 2023 - pubs.aip.org
We report on the growth of monoclinic β-and orthorhombic κ-phase Ga 2 O 3 thin films using
liquid-injection metal-organic chemical vapor deposition on highly thermally conductive 4H …

Interfacial engineering for the enhancement of interfacial thermal conductance in GaN/AlN heterostructure

Q Wang, X Wang, X Liu, J Zhang - Journal of Applied Physics, 2021 - pubs.aip.org
Effective heat dissipation is the bottleneck problem for the development and
commercialization of GaN-based high-power electronic and photonic devices. To address …

Electrothermal studies of GaN-based high electron mobility transistors with improved thermal designs

Q Hao, H Zhao, Y Xiao, MB Kronenfeld - … Journal of Heat and Mass Transfer, 2018 - Elsevier
In recent years, tremendous efforts have been dedicated to GaN high electron mobility
transistors (HEMTs) for high-power and high-frequency applications. In general, the …

[HTML][HTML] A hybrid simulation technique for electrothermal studies of two-dimensional GaN-on-SiC high electron mobility transistors

Q Hao, H Zhao, Y Xiao - Journal of Applied Physics, 2017 - pubs.aip.org
In this work, a hybrid simulation technique is introduced for the electrothermal study of a two-
dimensional GaN-on-SiC high electron mobility transistor. Detailed electron and phonon …

Electrothermal reliability of the high electron mobility transistor (Hemt)

A Amar, B Radi, H El Abdelkhalak - Applied Sciences, 2021 - mdpi.com
The main objective of our paper is to propose an approach to studying the mechatronic
system's reliability through the reliability of their high electron mobility transistors (HEMT) …

Hybrid Monte Carlo-diffusion studies of modeling self-heating in ballistic-diffusive regime for gallium nitride HEMTs

HL Li, Y Shen, YC Hua… - Journal of …, 2023 - asmedigitalcollection.asme.org
Exact assessment of self-heating is of great importance to the thermal management of
electronic devices, especially when completely considering the cross-scale heat conduction …

Hybrid AI-Thermal Model Trained via Monte Carlo Simulations to Study Self-Heating Effects

S García-Sánchez, I Íñiguez-de-la-Torre… - … on Electron Devices, 2024 - ieeexplore.ieee.org
This article presents a hybrid artificial intelligence (AI)-thermal model for the determination of
the current and lattice temperature of a device under a given bias voltage. The model is …

Non-linear thermal resistance model for the simulation of high power GaN-based devices

S García-Sánchez, I Íñiguez-de-la-Torre… - Semiconductor …, 2021 - iopscience.iop.org
We report on the modeling of self-heating in GaN-based devices. While a constant thermal
resistance is able to account for the self-heating effects at low power, the decrease of the …

Comparative study of electrical investigation for temperature measurement in AlGaN/GaN HEMT

FS Jui, S Alam, A Jarndal, C Gaquiere… - Journal of Computational …, 2024 - Springer
The modeling of self-heating in GaN-based devices is presented in this paper. A setup for
DC I–V and short pulse I–V was used to characterize the device. This paper used four …

Characterization of self-heating in cryogenic high electron mobility transistors using Schottky thermometry

AY Choi, I Esho, B Gabritchidze, J Kooi… - Journal of Applied …, 2021 - pubs.aip.org
Cryogenic low-noise amplifiers based on high electron mobility transistors (HEMTs) are
widely used in applications such as radio astronomy, deep space communications, and …