Molecular beam epitaxy growth of GaN, AlN and InN
X Wang, A Yoshikawa - Progress in crystal growth and characterization of …, 2004 - Elsevier
III-Nitrides receive much research attention and obtain significant development due to their
wide applications in light emitting diodes, laser diodes, ultraviolet detectors, solar cells, field …
wide applications in light emitting diodes, laser diodes, ultraviolet detectors, solar cells, field …
Nitride-based laser diodes grown by plasma-assisted molecular beam epitaxy
The progress in the growth of nitride-based laser diodes (LDs) made by plasma-assisted
molecular beam epitaxy (PAMBE) is reviewed. In this work we describe the GaN and InGaN …
molecular beam epitaxy (PAMBE) is reviewed. In this work we describe the GaN and InGaN …
High-electron-mobility GaN grown on free-standing GaN templates by ammonia-based molecular beam epitaxy
The dependence of electron mobility on growth conditions and threading dislocation density
(TDD) was studied for n−-GaN layers grown by ammonia-based molecular beam epitaxy …
(TDD) was studied for n−-GaN layers grown by ammonia-based molecular beam epitaxy …
Multi‐color light emitting diode using polarization‐induced tunnel junctions
MJ Grundmann, UK Mishra - physica status solidi c, 2007 - Wiley Online Library
A multi‐color light emitting diode (LED) using two distinct active regions connected via a
tunnel junction was grown by rf‐plasma‐assisted molecular beam epitaxy. The LED is …
tunnel junction was grown by rf‐plasma‐assisted molecular beam epitaxy. The LED is …
Applications of molecular beam epitaxy in optoelectronic devices: an overview
W Hidayat, M Usman - Physica Scripta, 2024 - iopscience.iop.org
Abstract Molecular Beam Epitaxy (MBE) is a crystal growth technique used to manufacture
ultra-thin semiconducting layers with nearly flawless control over layer their compositions …
ultra-thin semiconducting layers with nearly flawless control over layer their compositions …
Blue-violet InGaN laser diodes grown on bulk GaN substrates by plasma-assisted molecular-beam epitaxy
We report on the InGaN multiquantum laser diodes (LDs) made by rf plasma-assisted
molecular beam epitaxy (PAMBE). The laser operation at 408 nm is demonstrated at room …
molecular beam epitaxy (PAMBE). The laser operation at 408 nm is demonstrated at room …
Nitride-based laser diodes by plasma-assisted MBE—From violet to green emission
C Skierbiszewski, ZR Wasilewski, I Grzegory… - Journal of crystal …, 2009 - Elsevier
We present recent progress in growth of nitride-based laser diodes (LDs) and efficient light-
emitting diodes (LEDs) made by plasma-assisted MBE (PAMBE). This technology is …
emitting diodes (LEDs) made by plasma-assisted MBE (PAMBE). This technology is …
60mW continuous-wave operation of InGaN laser diodes made by plasma-assisted molecular-beam epitaxy
C Skierbiszewski, P Wiśniewski, M Siekacz… - Applied Physics …, 2006 - pubs.aip.org
We demonstrate continuous-wave operation at 411 nm of InGaN multi-quantum-well laser
diodes (LDs) made by plasma-assisted molecular-beam epitaxy (PAMBE). The threshold …
diodes (LDs) made by plasma-assisted molecular-beam epitaxy (PAMBE). The threshold …
High doping level in Mg-doped GaN layers grown at low temperature
A Dussaigne, B Damilano, J Brault, J Massies… - Journal of Applied …, 2008 - pubs.aip.org
We have studied the properties of Mg-doped GaN epilayers grown by molecular beam
epitaxy (MBE) with ammonia as nitrogen source. GaN pn homojunctions has been …
epitaxy (MBE) with ammonia as nitrogen source. GaN pn homojunctions has been …
High power blue–violet InGaN laser diodes grown on bulk GaN substrates by plasma-assisted molecular beam epitaxy
C Skierbiszewski, P Perlin, I Grzegory… - Semiconductor …, 2005 - iopscience.iop.org
We report on the InGaN multi-quantum well laser diodes (LDs) made by RF plasma-assisted
molecular beam epitaxy (PAMBE). The laser operation was demonstrated in a temperature …
molecular beam epitaxy (PAMBE). The laser operation was demonstrated in a temperature …