An innovative technology named FinFET (Fin Field Effect Transistor) has been developed to
offer better transistor circuit design and to compensate the necessity of superior storage …

The physical parameters of digital devices have been affected by process variability The
paper is focused on subthreshold performance characterization of FET with Visual TCAD …

The CMOS technology is rapidly growing towards large scale integration on a single chip
leading to smaller size consuming smaller area. The demand for speed and efficiency are …

Nowadays, the use of Static random-access memory (SRAM) is increasing in System on
Chip and VLSI circuits with the arrival of portable devices. Our main focus of research is …

Abstract Carbon Nanotube Field Effect Transistor (CNTFET) has proved to be very beneficial
for VLSI circuit designs in the nano scale range due to its amazing properties than …

Decreasing the power consumption and growing the noise margin have turn out to be two
imperative topics in the artwork SRAM design. Recent works have proven that the traditional …

Technologies involved CMOS, are reaching the nano processing realm by resulting in
several scaling challenges in the case of complementary MoSFETs, which have a short level …

Inherent variations and the challenge of leakage current control in today's silicon-on-
insulator metal–oxide–semiconductor field-effect transistor limits the scaling of static random …

The majority of current embedded systems use microprocessors equipped with volatile
cache memory based on static random access memory (SRAM) technology. As part of a …

Static random-access memory (SRAM) is increasingly being used in VLSI circuits as a result
of the development of portable devices. As the demand for low-power devices increases …