Recent results of studying the semiconductor's whisker nanocrystals are reviewed. Physical
grounds of growing whisker nanocrystals using the mechanism vapor-liquid-crystal are …

Selective area epitaxy (SAE) can be used to grow highly uniform III–V nanostructure arrays
in a fully controllable way and is thus of great interest in both basic science and device …

Nucleation theory provides a powerful tool for growth modeling of a variety of objects: from
liquid droplets to thin solid films and biological structures. Theoretical approaches based on …

We report on the fabrication of GaAs hexagonal nanowires surrounded by {110} vertical
facets on a GaAs (111) B substrate using selective-area (SA) metalorganic vapor-phase …

5,362.972 A 1 1/1994 Yazawa et al......... 257.13 electronic, photonic structures, and
electromechanical 5,381,753 A 1/1995 Okajima et al............... 117/12 MEMS devices, are …

We report growth by molecular beam epitaxy and structural characterization of gallium-
nucleated GaAs nanowires on silicon. The influences of growth temperature and V/III ratio …

III-V nanowires (NWs) on Si are promising building blocks for future nanoscale electrical and
optical devices on Si platforms. We present position-controlled and orientation-controlled …

We report on a catalyst-free approach for the growth of semiconductor nanowires which is
attracting interest as building blocks for nanoscale electronics and circuits. Our approach is …

We review the position-controlled growth of III-V nanowires (NWs) by selective-area metal-
organic vapor-phase epitaxy (SA-MOVPE). This epitaxial technique enables the positioning …

We report on size, shape, and position-controlled growth of high-density InAs nanowire
array on InAs (111) B substrates by selective-area metalorganic vapor phase epitaxy (SA …