Plasma cryogenic etching of silicon: from the early days to today's advanced technologies

R Dussart, T Tillocher, P Lefaucheux… - Journal of Physics D …, 2014 - iopscience.iop.org
The evolution of silicon cryoetching is reported in this topical review, from its very first
introduction by a Japanese team to today's advanced technologies. The main advances in …

[图书][B] Physics of radio-frequency plasmas

P Chabert, N Braithwaite - 2011 - books.google.com
Low-temperature radio frequency plasmas are essential in various sectors of advanced
technology, from micro-engineering to spacecraft propulsion systems and efficient sources …

Dry etching in the presence of physisorption of neutrals at lower temperatures

T Lill, IL Berry, M Shen, J Hoang, A Fischer… - Journal of Vacuum …, 2023 - pubs.aip.org
In this article, we give an overview about the chemical and physical processes that play a
role in etching at lower wafer temperatures. Conventionally, plasma etching processes rely …

Silicon carbide dry etching technique for pressure sensors design

AA Osipov, GA Iankevich, AA Osipov… - Journal of Manufacturing …, 2022 - Elsevier
This paper presents the results of an in-depth study of the plasma-chemical etching (PCE)
process of single-crystal silicon carbide (SiC) in SF 6/O 2 inductively coupled plasma (ICP) …

Spectroscopic Analysis of CF4/O2 Plasma Mixed with N2 for Si3N4 Dry Etching

WS Song, JE Kang, SJ Hong - Coatings, 2022 - mdpi.com
Silicon nitride (Si3N4) etching using CF4/O2 mixed with N2 has become very popular in 3D
NAND flash structures. However, studies on Si3N4 dry etching based on optical emission …

Optical diagnostic of LiNbO3 etching in NF3/Ar ICP plasma: Part I

A Osipov, S Alexandrov, V Berezenko… - Sensors and Actuators A …, 2022 - Elsevier
Optical emission spectroscopy is informative and nondisturbing technique for diagnostics of
various plasmas used for material treatment. In this work the distinctive features of emission …

Индуктивные источники высокоплотной плазмы и их технологические применения

ЕВ Берлин, ЛА Сейдман, ВЮ Григорьев - 2018 - elibrary.ru
Тенденции развития современной технологии электронной техники заключаются в
увеличении степени интеграции изделий на поверхности подложек, что связано как с …

Surface interactions of SO2 and passivation chemistry during etching of Si and SiO2 in SF6/O2 plasmas

JM Stillahn, J Zhang, ER Fisher - … of Vacuum Science & Technology A, 2011 - pubs.aip.org
A variety of materials can be etched in SF 6/O 2 plasmas. Here, the fate of SO 2 at Si and
SiO 2 surfaces during etching in SF 6/O 2 plasmas has been explored using the imaging of …

[PDF][PDF] Simulazioni numeriche di plasmi non termici mediante modelli globali

N Tamburini, A Popoli - 2021 - amslaurea.unibo.it
Questo lavoro si focalizza nella descrizione fisica dei plasmi a bassa temperatura. Si riporta
un'introduzione nella quale essi vengono descritti. Viene fornito un elenco di una serie di …

Proceso de grabado seco de silicio monocristalino para aplicaciones en guías de onda coplanares

R Leal-Romero, IE Zaldivar-Huerta… - Revista mexicana de …, 2010 - scielo.org.mx
En este trabajo se estudia la utilización de grabado anisotrópico y SRO con la finalidad de
mejorar el rendimiento de las guías de onda coplanares. Se presentan resultados …