With substantial data storage requirements, enhancing the storage density of emerging non-
volatile memories is a common challenge for achieving commercial applications. Phase …

In the last few decades, the development and use of thin films and nanostructured materials
to enhance physical and chemical properties of materials has been common practice in the …

Ge2Sb2Te5 thin film is investigated as a positive heat‐mode resist and environmentally
friendly FeCl3 solution is as means an efficient developer. The corrosion selectivity of …

The wet‐chemical synthesis of 3D confined antimony nanoparticles (Sb‐NP) at low and high
temperatures is described. Using reaction conditions that are mild in temperature and strong …

Abstract The structure of Ge2Sb2Te5 thin films doped with Bi has been studied using TEM,
Raman spectroscopy, and Optical Transmission Spectroscopy. Thin films were obtained by …

Ge 2 Sb 2 Te 5 (GST), a phase change material, generally exhibits two-step crystallization
(amorphous→ fcc→ hcp) to store and process data. The present study reports the …

Chalcogenide phase-change materials are promising for optical technologies, since they
allow rapid (tens of nanoseconds) reversible switching between the amorphous and …

In this paper, the Sm-doped Ge 10 Sb 90 films were proposed and the effect of Sm doping
on the crystal structure and electrical properties were investigated. The crystallization …

We investigated the microstructure and texture of completely crystalline Ge–Cu–Te thin
films, focusing on the grain orientation, grain boundary character distribution and …

Chalcogenide alloy-based semiconductors have gained significant attention in recent
decades due to its applications in phase change memory (PCM). Sb2Te3 has proven to be …