Advances in siliconcarbide microfabrication and growth process optimization for
siliconcarbide nanostructures are ushering in new opportunities for microdevices capable of …

A search of the recent literature reveals that there is a continuous growth of scientific
publications on the development of chemical vapor deposition (CVD) processes for silicon …

For a long time now, 3C-SiC has attracted attention of the semiconductor community due to
its very interesting properties. The lack of commercial 3C-SiC seeds for epitaxy has forced …

The chemical, structural, and electrical characteristics of in situ doped SiC films grown from
1, 3-disilabutane and NH3 at various growth temperatures, 650–850° C, are investigated by …

Silicon carbide (SiC) is a promising material for electronics due to its hardness, and ability to
carry high currents and high operating temperature. SiC films are currently deposited using …

A range of physical properties can be achieved in micro-electro-mechanical systems
(MEMS) through their encapsulation with solid-state, ultra-thin coatings. This paper reviews …

Small SiC nanoparticles (10 nm diameter) have been grown in a flow reactor by CO 2 laser
pyrolysis from a C 2 H 2 and SiH 4 mixture. The laser radiation is strongly absorbed by SiH 4 …

Experimental and theoretical studies of carbon–silicon multiple bonding have burgeoned
since reports of the first physical and chemical characterization of a molecule with a silicon …

Biomedical applications of silicon carbide (SiC) are becoming ever more known and
discussed, with more and more scientists interested in researching this topic. As SiC is a …

Small hydrogen-containing carbon–silicon species are thought to be important in the
interstellar medium due to the fact that carbon and silicon are the most abundant elements …