Study of interfacial design for direct-current tribovoltaic generators

X Xu, J Li, X Tao, Q Yan, H Wu, Z Guan, L Liu, X Chen… - Nano Energy, 2022 - Elsevier
As a newly discovered physical phenomenon, tribovoltaic effect has potential applications in
various fields. Herein, we systematically study the relationship between interfacial properties …

Design, fabrication, and analysis of 17-18-percent efficient surface-passivated silicon solar cells

A Rohatgi, P Rai-Choudhury - IEEE Transactions on Electron …, 1984 - ieeexplore.ieee.org
A simple analytical model has been developed which provides useful guidelines for
fabricating high-efficiency silicon solar cells. Consistent with the model calculations, both …

Highly Efficient Cadmium telluride Solar Cell with a Thin CuInTe2 Current Booster: Theoretical Insights

MS Hossain, MAH Pappu, BK Mondal… - Energy …, 2024 - Wiley Online Library
CdTe‐based thin film solar cell has been modeled and enumerated with a thin CuInTe2
(CIT) current booster layer. CdTe‐based n‐CdS/p‐CdTe/p+‐CIT/p++‐WSe2 heterojunction …

High-low junctions for solar cell applications

J Del Alamo, J Van Meerbergen, F d'Hoore, J Nijs - Solid-State Electronics, 1981 - Elsevier
A new theoretical model to calculate the effective surface recombination velocity (S eff) of a
high-low junction with an arbitrary impurity distribution is presented. The model is applied to …

Recent advances in the physics of silicon PN junction solar cells including their transient response

SC Jain, EL Heasell, DJ Roulston - Progress in Quantum Electronics, 1987 - Elsevier
Recent advances in the physics of silicon PN junction solar cells including their transient
response - ScienceDirect Skip to main contentSkip to article Elsevier logo Journals & Books …

Highly efficient CdTe solar cell with a thin CIT current booster: theoretical insights

MS Hossain, BK Mondal, AT Abir, J Hossain - arXiv preprint arXiv …, 2023 - arxiv.org
CdTe-based thin film solar cell has been modeled and enumerated with a thin CuInTe2
(CIT) current booster layer. CdTe-based n-CdS/p-CdTe/p+-CIT/p++-WSe2 heterojunction …

Demodulation pixel with backside illumination and charge barrier

T Oggier, M Lehmann - US Patent 9,117,712, 2015 - Google Patents
Three Dimensional (3D) time-of-flight (TOF) cameras are capable of getting range
information for all pixels of the TOF detector in real-time. TOF cameras typically include a …

Demodulation pixel incorporating majority carrier current, buried channel and high-low junction

B Buettgen, J Felber, M Lehmann, T Oggier - US Patent 9,698,196, 2017 - Google Patents
A demodulation pixel improves the charge transport speed and sensitivity by exploiting two
effects of charge transport in silicon in order to achieve the before-mentioned optimization …

Modeling of minority-carrier surface recombination velocity at low-high junction of an n/sup+/-pp/sup+/silicon diode

SN Singh, PK Singh - IEEE Transactions on electron devices, 1991 - ieeexplore.ieee.org
Modeling of recombination velocity of minority carriers at the pp/sup+/low-high junction end
of the p-base region of n/sup+/-pp/sup+/silicon diodes is carried out by taking the minority …

Theoretical and practical investigation of the thermal generation in gate controlled diodes

J van der Spiegel, GJ Declerck - Solid-State Electronics, 1981 - Elsevier
The different components of thermal generation in a gate controlled diode are studied
theoretically and experimentally. Expressions for the generation current in the space charge …