Solvation Shifts the Band-Edge Position of Colloidal Quantum Dots by Nearly 1 eV

YB Vogel, LN Pham, M Stam, RF Ubbink… - Journal of the …, 2024 - ACS Publications
The optoelectronic properties of colloidal quantum dots (cQDs) depend critically on the
absolute energy of the conduction and valence band edges. It is well known these band …

Construction of Z-type In2O3@ InP heterostructure with enhanced photo-assisted electrocatalytic water splitting for hydrogen production

T Wang, Y Wang, Y Liu, J Li, C Wang, DZ Pan… - International Journal of …, 2024 - Elsevier
We report an in-situ construction strategy of Z-type In 2 O 3@ InP hydrogen evolution
reaction (HER) electrocatalyst with well-defined core-shell structure on nickel foam (In 2 O …

Surface Passivation toward Multiple Inherent Dangling Bonds in Indium Phosphide Quantum Dots

Z Sun, Q Hou, J Kong, K Wang, R Zhang, F Liu… - Inorganic …, 2024 - ACS Publications
Indium phosphide (InP) quantum dots (QDs) have become the most recognized prospect to
be less-toxic surrogates for Cd-based optoelectronic systems. Due to the particularly …

Clean and sustainable recovery of valuable materials from InP scrap via controlled-pressure pyrolysis–spray condensation

J Zhang, L Kong, B Yang, B Xu - Journal of Cleaner Production, 2024 - Elsevier
Indium phosphide (InP) semiconductors play an irreplaceable role in optical communication,
and with the expansion of the market scale, the amount of InP scrap, which has become an …