The field of terahertz integrated technology has undergone significant development in the
past ten years. This has included work on different substrate technologies such as III–V …

Resonant tunneling diode (RTD) technology is emerging as one of the promising
semiconductor-based solid-state technologies for terahertz (THz) wireless communications …

Thanks to the abrupt advances in semiconductor technologies, particularly in terms of the
operating frequency, the last decade has seen various efforts and trials in attempts to …

We report the first ever terahertz monolithic integrated circuit amplifier based on 25-nm InP
high electron mobility transistor (HEMT) process demonstrating amplification at 1 THz (1000 …

Highly scaled indium phosphide (InP) heterojunction bipolar transistor (HBT) technologies
have been demonstrated with maximum frequencies of oscillation (f max) of> 1 THz and …

This paper presents an overview of the rapid progress being made in the development of
InP based devices for high speed applications. Over the past few decades, major aero …

In the last couple of decades, solid-state device technologies, particularly electronic
semiconductor devices, have been greatly advanced and investigated for possible adoption …

This paper presents Si/SiGe: C and InP/GaAsSb HBTs which feature specific assets to
address submillimeter-wave and THz applications. Process and modeling status and …

In this paper, a general embedding is proposed to boost the power gain of any device to the
maximum achievable gain (G max), which is defined as the maximum theoretical gain of the …

We report a new InP/GaAsSb double heterojunction bipolar transistor (DHBT) emitter fin
architecture with a record THz, a simultaneous GHz, and V. The resulting THz-V is …