Normally-off AlGaN/GaN MIS-HEMTs with a high threshold voltage () more than 2.5 V and a
low on-resistance of mm have been achieved by an improved regrowth technique with in …

Heterogeneous integration of dissimilar crystalline materials has recently attracted
considerable attention due to its potential for high-performance multifunctional electronic …

This work adopts interface charge engineering to fabricate normally off metal–insulator–
semiconductor high electron mobility transistors (MIS-HEMTs) on an in situ SiN …

In an interconnected high-vacuum illustration system, the surfaces of p-InGaN/GaN
heterostructures grown with integrated metalorganic chemical vapor deposition were treated …

The high-k nature of HfO 2 makes it a competitive gate oxide for various GaN-based power
devices, but the high trap densities at the HfO 2/GaN interface have hindered the …

InGaN/AlGaN ultraviolet light-emitting diodes (UV LEDs) suffer from residual in-plane
compressive stress and poor carrier injection efficiency. Here, we simultaneously reduce the …

GaN metal-insulator-semiconductor high electron mobility transistors (MIS-HEMTs) are
potential candidates for the next generation of high-power electronics. To further reduce …

After the surfaces of p-InGaN/GaN samples were subsequently exposed to O2 for different
times at room temperature, Pd/Pt/Au were sputtered on them to investigate their current …

Thanks to GaN's high breakdown electric field, high electron mobility and saturation velocity,
GaN-based devices are considered promising candidates for power switching and RF …