The next generation wireless network, 5G, is expected to provide ubiquitous connections to
billions of devices as well as to unlock many new services through multigigabit-per-second …

GaN integrated circuit technologies have dramatically progressed over the recent years. The
prominent feature of GaN high-electron mobility transistors (HEMTs), unparalleled output …

This article presents a generalized theory and new design methodology for reverse-load-
modulated dual-branch (RMDB) power amplifiers (PAs), which uses a current-biased …

This paper presents a K-band two-stage power amplifier (PA) with a compact circuit size of
1.8× 0.87 mm2. To guarantee broadband highgain output performance, the optimal …

In this paper, we present a design approach for broadband harmonic-tuned monolithic
microwave integrated circuit (MMIC) power amplifiers (PAs). Two harmonic matching …

This article presents a-band integrated transceiver (T/R) single chip based on gallium nitride
(GaN) high electron mobility transistor (HEMT) technology for active electronically scanned …

This paper presents a design procedure for a wideband 6-18-GHz monolithic microwave
integrated circuit highpower amplifier (HPA) in 0.25-μm AlGaAs-InGaAs pHEMT technology …

This letter presents a-band high-efficiency fully integrated high-power amplifier (HPA)
monolithic microwave integrated circuit (MMIC) in 0.25 gallium nitride (GaN) high electron …

This paper presents a methodology for the design of Ka/Q-band monolithic microwave
integrated circuit (MMIC) high-power amplifiers (HPAs). Design techniques are introduced to …

This letter presents a Ka-Band 0.1-μm GaAs pHEMT Power Amplifier with broad bandwidth.
The isolating backvia wall (IBVW) has been proposed to improve the stability and …