Capacitance–conductance–current–voltage characteristics of atomic layer deposited Au/Ti/Al2O3/n-GaAs MIS structures
We have studied the admittance and current–voltage characteristics of the Au/Ti/Al 2 O 3/n-
GaAs structure. The Al 2 O 3 layer of about 5 nm was formed on the n-GaAs by atomic layer …
GaAs structure. The Al 2 O 3 layer of about 5 nm was formed on the n-GaAs by atomic layer …
Room temperature deposition of XRD-amorphous TiO2 thin films: Investigation of device performance as a function of temperature
In this study, TiO 2 thin films were fabricated by radio frequency sputtering at room
temperature in pure Ar atmosphere starting from a 6 in. TiO 2 target. The thickness of the …
temperature in pure Ar atmosphere starting from a 6 in. TiO 2 target. The thickness of the …
Double exponential I–V characteristics and double Gaussian distribution of barrier heights in (Au/Ti)/Al2O3/n-GaAs (MIS)-type Schottky barrier diodes in wide …
In this study, current conduction mechanisms of the sample (Au/Ti)/Al 2 O 3/n-GaAs were
investigated in detail using current–voltage (I–V) measurements in the temperature range of …
investigated in detail using current–voltage (I–V) measurements in the temperature range of …
The investigation of current-conduction mechanisms (CCMs) in Au/(0.07 Zn-PVA)/n-4H-SiC (MPS) Schottky diodes (SDs) by using (IVT) measurements
MH Al-Dharob, HE Lapa, A Kökce, AF Özdemir… - Materials Science in …, 2018 - Elsevier
The semi-logarithmic forward bias IV plots of the Au/(0.07 Zn-PVA)/n-4H-SiC (MPS) type
SBDs showed double exponential behavior therefore these plots revealed two distinct linear …
SBDs showed double exponential behavior therefore these plots revealed two distinct linear …
[HTML][HTML] Temperature dependent electrical characterisation of Pt/HfO2/n-GaN metal-insulator-semiconductor (MIS) Schottky diodes
This paper reports an improvement in Pt/n-GaN metal-semiconductor (MS) Schottky diode
characteristics by the introduction of a layer of HfO 2 (5 nm) between the metal and …
characteristics by the introduction of a layer of HfO 2 (5 nm) between the metal and …
Study of barrier inhomogeneities in I–VT and CVT characteristics of Al/Al2O3/PVA: n-ZnSe metal–oxide–semiconductor diode
M Sharma, SK Tripathi - Journal of Applied Physics, 2012 - pubs.aip.org
This paper presents detailed analysis of forward and reverse bias IV and CV characteristics
of Al/Al 2 O 3/PVA: n-ZnSe metal-oxide-semiconductor diode. PVA: n-ZnSe nanocomposites …
of Al/Al 2 O 3/PVA: n-ZnSe metal-oxide-semiconductor diode. PVA: n-ZnSe nanocomposites …
Detection of current transport mechanisms for graphene-doped-PVA interlayered metal/semiconductor structures
The possible current-transport mechanisms (CTMs) of Au/(% 7Gr-doped) PVA/n-GaAs
structure was examined between 80 K and 360 K. The forward bias semi-logarithmic I–V …
structure was examined between 80 K and 360 K. The forward bias semi-logarithmic I–V …
Temperature dependence of electrical parameters of the Cu/n-Si metal semiconductor Schottky structures
The main electrical characteristics of Cu/n-Si metal-semiconductor structures have been
investigated in the temperature range 50 K to 310 K using current–voltage (I–V) and …
investigated in the temperature range 50 K to 310 K using current–voltage (I–V) and …
On the origin of increase in the barrier height and decrease in ideality factor with increase temperature in Ag/SiO2/p-Si (MIS) Schottky barrier diodes (SBDs)
S Altındal - Journal of Materials and Electronic Devices, 2015 - dergi-fytronix.com
In order to get more information on possible current conduction mechanisms (CCMs)
through junction and the nature of barrier height (BH) at metal/semiconductor interface, the …
through junction and the nature of barrier height (BH) at metal/semiconductor interface, the …
Capacitance-conductance-frequency characteristics of Au/Ni/n-GaN/undoped GaN Structures
Frequency-dependent capacitance (C) and conductance (G) characteristics of the Au/Ni/n-
GaN/undoped GaN device have been investigated in the reverse bias voltage range of 0.00 …
GaN/undoped GaN device have been investigated in the reverse bias voltage range of 0.00 …