Stability, reliability, and robustness of GaN power devices: A review
Gallium nitride (GaN) devices are revolutionarily advancing the efficiency, frequency, and
form factor of power electronics. However, the material composition, architecture, and …
form factor of power electronics. However, the material composition, architecture, and …
Multidimensional device architectures for efficient power electronics
Power semiconductor devices are key to delivering high-efficiency energy conversion in
power electronics systems, which is critical in efforts to reduce energy loss, cut carbon …
power electronics systems, which is critical in efforts to reduce energy loss, cut carbon …
Highly scaled GaN complementary technology on a silicon substrate
This article reports on the scaling of GaN complementary technology (CT) on a silicon
substrate to push its performance limits for circuit-level applications. The highly scaled self …
substrate to push its performance limits for circuit-level applications. The highly scaled self …
High temperature robustness of enhancement-mode p-GaN-gated AlGaN/GaN HEMT technology
This paper reports on the high temperature (HT) robustness of enhancement-mode (E-
mode) p-GaN-gated Al-GaN/GaN high electron mobility transistors (HEMTs), with an …
mode) p-GaN-gated Al-GaN/GaN high electron mobility transistors (HEMTs), with an …
Heterogeneous and monolithic 3D integration technology for mixed-signal ICs
For next-generation system-on-chips (SoCs) in diverse applications (RF, sensor, display,
etc.) which require high-performance, small form factors, and low power consumption …
etc.) which require high-performance, small form factors, and low power consumption …
Microwave and Millimeter-Wave GaN HEMTs: Impact of Epitaxial Structure on Short-Channel Effects, Electron Trapping, and Reliability
Application of gallium nitride high-electron-mobility transistors (GaN HEMTs) to millimeter-
wave power amplifiers requires gate length scaling below 150 nm: in order to control short …
wave power amplifiers requires gate length scaling below 150 nm: in order to control short …
Enhancement-mode 300-mm GaN-on-Si (111) with integrated Si CMOS for future mm-wave RF applications
A 300-mm GaN-on-Si (111) high-gate dielectric E-mode GaN MOSHEMT technology is
demonstrated with uniform process and wafer characteristics. The E-mode GaN MOSHEMT …
demonstrated with uniform process and wafer characteristics. The E-mode GaN MOSHEMT …
RF Enhancement-Mode p-GaN Gate HEMT on 200 mm-Si Substrates
Enhancement-mode (E-mode) submicron 0.45--GaN gate HEMTs on 200-mm high-
resistivity-Si (HRS) substrates have been demonstrated with high uniformity and high overall …
resistivity-Si (HRS) substrates have been demonstrated with high uniformity and high overall …
High-performance AlN/GaN MISHEMTs on Si with in-situ SiN enhanced ohmic contacts for mobile mm-Wave front-end applications
In this letter, we demonstrated an AlN/GaN metal-insulator-semiconductor high electron
mobility transistor (MISHEMT) on a Si substrate with in-situ SiN as gate dielectric with …
mobility transistor (MISHEMT) on a Si substrate with in-situ SiN as gate dielectric with …
The hardware foundation of 6G: The NEW-6G approach
The design of future 6th Generation (6G) wireless connect-compute-control networks
requires new approaches for the design of hardware, new materials and hybridization …
requires new approaches for the design of hardware, new materials and hybridization …