Reflection anisotropy spectroscopy
P Weightman, DS Martin, RJ Cole… - Reports on Progress in …, 2005 - iopscience.iop.org
Reflection anisotropy spectroscopy (RAS) is a non-destructive optical probe of surfaces that
is capable of operation within a wide range of environments. In this review we trace the …
is capable of operation within a wide range of environments. In this review we trace the …
Optical second harmonic generation in semiconductor nanostructures
TV Murzina, AI Maydykovskiy… - Physics Research …, 2012 - Wiley Online Library
Optical second harmonic generation (SHG) studies of semiconductor nanostructures are
reviewed. The second‐order response data both predicted and observed on pure and …
reviewed. The second‐order response data both predicted and observed on pure and …
Layer-resolved kinetics of Si oxidation investigated using the reflectance difference oscillation method
T Yasuda, N Kumagai, M Nishizawa, S Yamasaki… - Physical Review B, 2003 - APS
Dry oxidation kinetics of the Si (001) surface has been investigated using reflectance
difference oscillation to resolve atomic-scale phenomena. The activation energy for …
difference oscillation to resolve atomic-scale phenomena. The activation energy for …
Reaction mechanisms of oxygen at SiO2/Si (1 0 0) interface
T Akiyama, H Kageshima - Surface science, 2005 - Elsevier
First-principles total-energy calculations are performed to clarify the reaction mechanisms of
O atoms and O2 molecules at SiO2/Si (100) interface. The calculated energies reveal that …
O atoms and O2 molecules at SiO2/Si (100) interface. The calculated energies reveal that …
Origin of center at interface: First-principles calculations
K Kato, T Yamasaki, T Uda - Physical Review B—Condensed Matter and …, 2006 - APS
Based on first-principles calculations, we studied the generation behavior of P b centers at
Si O 2∕ Si interfaces, especially for P b 1 centers, under oxidation of Si (100) surfaces. P b 1 …
Si O 2∕ Si interfaces, especially for P b 1 centers, under oxidation of Si (100) surfaces. P b 1 …
[图书][B] Optics of Nanomaterials
VI Gavrilenko - 2016 - taylorfrancis.com
While the chemistry, physics, and optical properties of simple atoms and molecules are quite
well understood, this book demonstrates that there is much to be learned about the optics of …
well understood, this book demonstrates that there is much to be learned about the optics of …
Understanding the optical anisotropy of oxidized Si (001) surfaces
First-principles optical-response calculations of oxidized and strained Si structures are
presented. Local Si lattice deformations accompanying the oxidation of Si bulk bonds cause …
presented. Local Si lattice deformations accompanying the oxidation of Si bulk bonds cause …
Optical studies of Si/SiO 2 interfaces by second-harmonic generation spectroscopy of silicon interband transitions
W Daum - Applied Physics A, 2007 - Springer
Optical second-harmonic generation (SHG) studies of Si/SiO 2 interfaces by resonant two-
photon excitation of Si interband transitions are reviewed. Three different types of interband …
photon excitation of Si interband transitions are reviewed. Three different types of interband …
Reflectance anisotropies of polycrystalline Ce1− x Gdx O2− x/2/Si (001) interfaces
JGR Hernández-Arteaga, AG Rodríguez… - Applied Surface …, 2023 - Elsevier
Ce 1− x Gd x O 2− x/2 thin films were deposited by spin coating on oxidized Si (001)
substrates. Two strain regimes are observed by μ− Raman spectroscopy: for x< 0.1 the films …
substrates. Two strain regimes are observed by μ− Raman spectroscopy: for x< 0.1 the films …
In situ ESR Observation of Interface Dangling Bond Formation Processes During Ultrathin Growth On Si(111)
W Futako, N Mizuochi, S Yamasaki - Physical review letters, 2004 - APS
We report the formation processes of interface dangling bonds (P b centers) during initial
oxidation of a clean Si (111) surface using an ultrahigh-vacuum electron-spin-resonance …
oxidation of a clean Si (111) surface using an ultrahigh-vacuum electron-spin-resonance …