Surface-passivated high-resistivity silicon substrates for RFICs
B Rong, JN Burghartz, LK Nanver… - IEEE Electron …, 2004 - ieeexplore.ieee.org
Surface passivation of high-resistivity silicon (HRS) by amorphous silicon thin-film
deposition is demonstrated as a novel technique for establishing HRS as a microwave …
deposition is demonstrated as a novel technique for establishing HRS as a microwave …
Low-Loss and Broadband Asymmetric Broadside-Coupled Balun for Mixer Design in 0.18- CMOS Technology
HK Chiou, TY Yang - IEEE Transactions on Microwave Theory …, 2008 - ieeexplore.ieee.org
This study presents an asymmetric broadside coupled balun with low-loss broadband
characteristics for mixer designs. The correlation between balun impedance and a 3D …
characteristics for mixer designs. The correlation between balun impedance and a 3D …
Surface-passivated high-resistivity silicon as a true microwave substrate
This paper addresses the properties of a surface-passivated (enhanced) high-resistivity
silicon (HRS) substrate for use in monolithic microwave technology. The detrimental effects …
silicon (HRS) substrate for use in monolithic microwave technology. The detrimental effects …
SiGe radio frequency ICs for low-power portable communication
JR Long - Proceedings of the IEEE, 2005 - ieeexplore.ieee.org
The range and impact of SiGe bipolar and BiCMOS technologies on wireless transceivers
for portable telephony and data communications are surveyed. SiGe technology enables …
for portable telephony and data communications are surveyed. SiGe technology enables …
A versatile 10–80-Gb/s PRBS-based broadband transmitter with arbitrary 20–60-GHz spectrum shifting
A Gharib, R Weigel, D Kissinger - IEEE Transactions on …, 2016 - ieeexplore.ieee.org
A versatile pseudorandom bit sequence (PRBS)-based transmitter with the ability to mix the
generated PRBS spectrum to arbitrary frequencies is presented. It incorporates a 2 11-1 80 …
generated PRBS spectrum to arbitrary frequencies is presented. It incorporates a 2 11-1 80 …
Ring-gate MOSFET test structures for measuring surface-charge-layer sheet resistance on high-resistivity-silicon substrates
SB Evseev, LK Nanver… - 2006 IEEE International …, 2006 - ieeexplore.ieee.org
Ring-gate MOSFET test structures have been developed with which a differential
measurement technique can be used to accurately determine the surface-charge-layer …
measurement technique can be used to accurately determine the surface-charge-layer …
Comparison of high-resistivity silicon surface passivation methods
M Norling, D Kuylenstierna, A Vorobiev… - 2007 European …, 2007 - ieeexplore.ieee.org
This paper describes low-frequency measurements and comparative analysis of methods
used for surface passivation of high-resistivity silicon (HR-Si). A number of substrates are …
used for surface passivation of high-resistivity silicon (HR-Si). A number of substrates are …
Saddle add-on metallization for RF-IC technology
JN Burghartz, B Rejaei… - IEEE Transactions on …, 2004 - ieeexplore.ieee.org
A cost-effective add-on process module for reducing ohmic losses of radio-frequency (RF)
inductors and interconnects in RF/BiCMOS and RF/CMOS technologies built on CMOS logic …
inductors and interconnects in RF/BiCMOS and RF/CMOS technologies built on CMOS logic …
15–60 GHz asymmetric broadside coupled balun in 0.18 µm CMOS technology
HK Chiou, TY Yang, YC Hsu, SG Lin, YZ Juang - Electronics Letters, 2007 - IET
A 15–60 GHz asymmetric broadside coupled balun fabricated in the standard TSMC 0.18
µm CMOS process is demonstrated. Using the broadside tight coupling technique, the balun …
µm CMOS process is demonstrated. Using the broadside tight coupling technique, the balun …
[PDF][PDF] Characterization of high-resistivity silicon bulk and silicon-on-insulator wafers
P Nayak - 2012 - core.ac.uk
ABSTRACT High-Resistivity Silicon (HRS) substrates are important for low-loss,
highperformance microwave and millimeter wave devices in high-frequency …
highperformance microwave and millimeter wave devices in high-frequency …