We show that the band gap bowing trends observed in III-V alloys containing dilute
concentrations of Sb or Bi can be explained within the framework of the valence-band …

We develop an atomistic, nearest-neighbor sp 3 s* tight-binding Hamiltonian to investigate
the electronic structure of dilute bismide alloys of GaP and GaAs. Using this model, we …

In this review we describe the growth and properties of the dilute bismide semiconductor
alloy GaAs1− xBix and show how its properties are in certain respects complementary to the …

GaAsBiN is a potentially interesting alloy which may be exploited in near-and mid-infrared
photonic devices. Here we present the predicted band parameters such as band gap (E g) …

Highly mismatched semiconductor alloys such as GaN x As 1− x and GaBi x As 1− x have
several novel electronic properties, including a rapid reduction in energy gap with …

We report time-resolved terahertz spectroscopy measurements of the electronic transport
properties of dilute GaAs bismide and nitride alloys. The electron mobility for Ga As 1− y Bi y …

The incorporation of bismuth (Bi) in GaAs results in a large reduction of the band gap energy
(E g) accompanied with a large increase in the spin-orbit splitting energy (△ SO), leading to …

Using an sp 3 s* tight-binding (TB) model we demonstrate how the observed strong bowing
of the band gap and spin-orbit-splitting with increasing Bi composition in the dilute bismide …

InAsSbBi nBn photodetectors are demonstrated that are lattice-matched to the underlying
GaSb substrate with a 4.32 μm wavelength cutoff at 150 K that is 0.3 μm longer than that of …

Abstract Triple‐junction GaInP/GaAs/GaInNAs solar cells with conversion efficiency of~ 29%
at AM0 are demonstrated using a combination of molecular beam epitaxy (MBE) and metal …