[HTML][HTML] CMOS low noise amplifier design trends towards millimeter-wave IoT sensors
Millimeter Wave (mm-wave) technology is a prerequisite to ensure ubiquitous wireless
communication, given the rapid growth of the Internet of Things (IoT) infrastructure that …
communication, given the rapid growth of the Internet of Things (IoT) infrastructure that …
A 21-to-41-GHz high-gain low noise amplifier with triple-coupled technique for multiband wireless applications
Y Yu, J Zhu, Z Zong, P Tang, H Liu… - … on Circuits and …, 2020 - ieeexplore.ieee.org
This brief presents a wideband millimeter-wave (mm-Wave) low noise amplifier (LNA) with a
triple-coupled technique for multiband wireless applications. To enlarge the gain and reduce …
triple-coupled technique for multiband wireless applications. To enlarge the gain and reduce …
A Gm-Boosting Technique for Millimeter-Wave Low-Noise Amplifiers in 28-nm Triple-Well Bulk CMOS Using Floating Resistor in Body Biasing
This paper presents a simple yet effective-boosting technique for improving gain and noise
performance of millimeter-wave (mm-wave) low-noise amplifiers (LNAs) comprising triple …
performance of millimeter-wave (mm-wave) low-noise amplifiers (LNAs) comprising triple …
A 56-to-66 GHz CMOS low-power phased-array receiver front-end with hybrid phase shifting scheme
This paper presents a millimeter-wave phased-array receiver front-end with compact size
and low-power consumption. A combination of local oscillator (LO) and radio frequency (RF) …
and low-power consumption. A combination of local oscillator (LO) and radio frequency (RF) …
An improved cascode common-source LNA with inductive source degeneration for RF applications
F Gozalpour, M Dodangeh, M Yavari… - AEU-International Journal …, 2022 - Elsevier
This paper presents a novel structure to enhance the power gain (S 21) of the conventional
cascode common-source (CS) low-noise amplifier (LNA) with inductive source …
cascode common-source (CS) low-noise amplifier (LNA) with inductive source …
A 3.6 mW 60 GHz low-noise amplifier with 0.6 ns settling time for duty-cycled receivers
This letter presents the first duty-cycled low-noise amplifier (LNA) operating in the V-band
(40-75 GHz). The amplifier employs a two-stage cascode topology and focuses on low …
(40-75 GHz). The amplifier employs a two-stage cascode topology and focuses on low …
A 50–67-GHz ultralow-power LNA using double-transformer-coupling technique and self-resonant matching in 90-nm CMOS
MH Li, Y Wang, H Wang - IEEE Microwave and Wireless …, 2021 - ieeexplore.ieee.org
In this letter, a-band (50–75 GHz) ultralow-power low-noise amplifier (LNA) in 90-nm CMOS
technology is presented. A double-transformer-coupling (DTC) technique is used to improve …
technology is presented. A double-transformer-coupling (DTC) technique is used to improve …
Design of an ultra-compact 60-GHz bi-directional amplifier in 65-nm CMOS
D Cheng, X Chen, Q Chen, L Li… - IEEE Microwave and …, 2021 - ieeexplore.ieee.org
This letter presents an ultra-compact two-stage 60-GHz differential bi-directional amplifier
(DBA) design in a 65-nm CMOS process. To satisfy the stability and gain requirements, a …
(DBA) design in a 65-nm CMOS process. To satisfy the stability and gain requirements, a …
A 60 GHz Broadband LNA With Joined Variable Gain Control and Switching in 22 nm FD-SOI
This paper investigates a 60 GHz low-power broadband low noise amplifier (LNA) with
variable gain control. To prove the concept, the circuit is implemented in a 22nm fully …
variable gain control. To prove the concept, the circuit is implemented in a 22nm fully …
A 0.75 V Sub-mW CMOS LNA employing transmitted signal suppression technique in a full-duplex wireless brain-machine interface transceiver
This paper presents a sub-milliwatt (sub-mW) low-voltage CMOS low-noise amplifier (LNA)
that can be utilized in a full-duplex transceiver without using duplexer. The topology of the …
that can be utilized in a full-duplex transceiver without using duplexer. The topology of the …