On a detail examination of frequency and voltage dependence of dielectric, electric modulus, ac conductivity (σac) of the Al/DLC/p-Si structures between 2 kHz and 1 …
E Balcı, AF Vahid, B Avar, Ş Altındal - Physica B: Condensed Matter, 2024 - Elsevier
In this study, the frequency/voltage dependent profiles of the real/imaginary parts of the
complex-dielectric (ε′, ε"), electric-modulus (M′, M"), impedance (Z′, Z"), loss-tangent …
complex-dielectric (ε′, ε"), electric-modulus (M′, M"), impedance (Z′, Z"), loss-tangent …
A comparison electrical characteristics of the Au/(pure-PVA)/n-Si and Au/(CdTe doped-PVA)/n-Si (MPS) type Schottky structures using I–V and C–V measurements
In this study, both the Au/(pure-PVA)/n-Si (MPS-1) and Au/(CdTe: PVA)/n-Si (MPS-2) type
Schottky diodes (SDs) were fabricated onto the same n-Si wafer in same conditions. After …
Schottky diodes (SDs) were fabricated onto the same n-Si wafer in same conditions. After …
The study of the dependence of dielectric properties, electric modulus, and ac conductivity on the frequency and voltage in the Au/(CdTe: PVA)/n-Si (MPS) structures
The dielectric properties, electric modulus, loss tangent (tan δ), and ac conductivity of the
fabricated Au/(CdTe: PVA)/n-Si (MPS) structures were investigated in wide-range frequency …
fabricated Au/(CdTe: PVA)/n-Si (MPS) structures were investigated in wide-range frequency …
Investigation into the impedance, dielectric behavior, and conductivity within p-silicon/n-nanocrystalline iron disilicide heterojunctions and equivalent circuit model in …
N Borwornpornmetee, P Sittimart, T Traiprom… - Materials Science in …, 2025 - Elsevier
The p-Si/n-nanocrystalline FeSi 2 heterojunctions constructed through facing-targets
sputtering were characterized for impedance under various frequencies and temperatures of …
sputtering were characterized for impedance under various frequencies and temperatures of …
Frequency-dependent dielectric, electric modulus, and ac conductivity features of Au/n-Si Schottky diodes (SDs) with PVC and (PVC: Graphite/Graphene-Oxide) …
To determine the interlayer effect on dielectric features and conductivity, Au/n-Si (S 0),
Au/PVC/p-Si (S 1), and Au/PVC: Gt-GO/p-Si (S 2) type SDs were grown onto the same n-Si …
Au/PVC/p-Si (S 1), and Au/PVC: Gt-GO/p-Si (S 2) type SDs were grown onto the same n-Si …
Frequency and voltage dependent of electrical and dielectric properties of Ag/GO doped NiO/p-Si/Al MOS structures under darkness and light
H ÖZERLİ - Physica B: Condensed Matter, 2025 - Elsevier
At studying, we searched the frequency and voltage dependency of the electrical and
dielectric traits of a nano-made NiO-contributed GO thin film enlarged on a p-type silicon …
dielectric traits of a nano-made NiO-contributed GO thin film enlarged on a p-type silicon …
Structural and electronic characterization of the precipitate phase in deformed Cu–13.81% Mn–3.78% Al alloy
E Aldirmaz - Journal of Materials Science: Materials in Electronics, 2024 - Springer
In this paper, crystallographic, morphological, mechanical, thermomechanical, and
electronic properties of Cu–13.81% Mn–3.78% Al (wt.%) alloy has been investigated under …
electronic properties of Cu–13.81% Mn–3.78% Al (wt.%) alloy has been investigated under …
The electrical characterization of V2O5/p-Si prepared by spray pyrolysis technique using perfume atomizer
V Eratilla, S Ruzgar - Indian Journal of Physics, 2024 - Springer
Abstract Vanadium pentoxide (V2O5) thin films were deposited onto glass and p-type silicon
substrates via spray pyrolysis by using a perfume atomizer. The surface morphology of thin …
substrates via spray pyrolysis by using a perfume atomizer. The surface morphology of thin …
Analysis of Frequency and Voltage Dependent Electrical Features of Au/Si3N4/p-GaAs (MIS) Device at Room Temperature
RE Uyar - Gazi University Journal of Science Part A: Engineering …, 2024 - dergipark.org.tr
The investigation presented here deals with the comprehensive analysis of the CVf and G/ω-
Vf characteristics of the Au/Si3N4/p-GaAs (MIS) device. These measurements were …
Vf characteristics of the Au/Si3N4/p-GaAs (MIS) device. These measurements were …