High-power flip-chip light-emitting diodes (FCLEDs) suffer from low efficiencies because of
poor p-type reflective ohmic contact and severe current crowding. Here, we show that it is …

This study analyzes the current spreading effect and light extraction efficiency (LEE) of
lateral and vertical light-emitting diodes (LEDs). Specifically, this study uses a fully 2-D …

We investigate the effects of current spreading on the efficiency droop of InGaN blue light-
emitting diodes with lateral injection geometry based on numerical simulation. Current …

This paper studies the key parameters affecting on-resistance and current crowding in quasi-
vertical GaN power devices by experiment and simulation. The current distribution in the drift …

Composited p-type electrodes with high reflectivity have been investigated in AlGaN-based
ultraviolet light emitting diodes (UV-LEDs) to improve the light extraction efficiency, which …

We report on the measurement of the lateral distribution of the junction current of an
electrical biased pn GaN diode by electron emission microscopy using a low-energy …

The novel honeycomb hole-shaped electrode (HHSE) structure was proposed for 280-nm
AlGaN-based flip-chip deep-ultraviolet light emitting diode (DUV-LED), which was …

Low external quantum efficiency of deep ultraviolet light-emitting diodes (DUV LEDs) and
current crowding can result in considerable heat generation, which has a great negative …

An advanced three-dimensional electrothermal-coupled simulation model basing on finite-
element method numerical simulation is developed to study the electrical and thermal …

The effects of p-and n-electrode patterning on the current spreading and driving voltage of a
side-view GaN∕ sapphire light-emitting diode (LED) chip are investigated via a numerical …