[PDF][PDF] Дефектно-примесная инженерия в имплантированном кремнии
АР Челядинский, ФФ Комаров - Успехи физических наук, 2003 - bsu.by
Ионная имплантация является в настоящее время основным методом создания
легированных слоев полупроводников. Она обладает рядом неоспоримых …
легированных слоев полупроводников. Она обладает рядом неоспоримых …
Voids in silicon by He implantation: From basic to applications
The mechanism of bubble formation when He is implanted into silicon is described. Many
experiments are reviewed and several techniques are considered. During implantation and …
experiments are reviewed and several techniques are considered. During implantation and …
Defect-impurity engineering in implanted silicon
AR Chelyadinskii, FF Komarov - Physics-Uspekhi, 2003 - iopscience.iop.org
The basic results of the studies of defect–impurity interaction in implanted silicon are
presented. Factors affecting the way in which quasichemical reactions proceed—namely …
presented. Factors affecting the way in which quasichemical reactions proceed—namely …
He-vacancy interactions in Si and their influence on bubble formation and evolution
The mechanisms of He bubble and, after annealing, of void formation have been
investigated for single and multiple He+ implants in Si. Several analytical techniques have …
investigated for single and multiple He+ implants in Si. Several analytical techniques have …
Formation, evolution, and annihilation of interstitial clusters in ion-implanted Si
S Libertino, S Coffa, JL Benton - Physical Review B, 2001 - APS
We review the results of several experiments aimed to elucidate the thermal evolution of the
self-interstitial excess introduced by Si-ion implantation in crystalline Si. Deep-level transient …
self-interstitial excess introduced by Si-ion implantation in crystalline Si. Deep-level transient …
Electrical signatures and thermal stability of interstitial clusters in ion implanted Si
JL Benton, K Halliburton, S Libertino… - Journal of applied …, 1998 - pubs.aip.org
Deep level transient spectroscopy (DLTS) investigations have been used to characterize the
electrical properties of interstitial clusters in ion-implanted Si. Both n-and p-type samples …
electrical properties of interstitial clusters in ion-implanted Si. Both n-and p-type samples …
Chemical insight into electron density and wave functions: software developments and applications to crystals, molecular complexes and materials science
This paper overviews the work made by our group during the past 10–15 years on
crystalline systems, semiconductor surfaces, molecular complexes and on materials of …
crystalline systems, semiconductor surfaces, molecular complexes and on materials of …
Evolution of energetics and bonding of compact self-interstitial clusters in Si
The growth of self-interstitial clusters in crystalline Si is investigated by semi-empirical tight-
binding molecular dynamics. The equilibrium configuration of each n-interstitial cluster (n …
binding molecular dynamics. The equilibrium configuration of each n-interstitial cluster (n …
Toward defect-free doping by self-assembled molecular monolayers: the evolution of interstitial carbon-related defects in phosphorus-doped silicon
Self-assembled molecular monolayer (SAMM) doping on semiconductors has been widely
appraised for its advantages of doping nanoelectronic devices for applications in the …
appraised for its advantages of doping nanoelectronic devices for applications in the …
Damage formation and evolution in ion-implanted crystalline Si
S Libertino, A La Magna - Materials science with ion beams, 2009 - Springer
Damage formation during ion implantation in crystalline Si and its evolution as a function of
annealing have been widely investigated both theoretically and experimentally in the last …
annealing have been widely investigated both theoretically and experimentally in the last …