Design of highly stable, high speed and low power 10T SRAM cell in 18-nm FinFET technology
Many scientists are working to develop a static random-access memory (SRAM) cell that
used little power and has good stability and speed. This work introduces a fin field effect …
used little power and has good stability and speed. This work introduces a fin field effect …
Effect of Wfin, Hfin and Lg on the performance of 14-nm FinFET for analog and RF applications
FinFET devices have been popular for decades since their development due to their
excellent gate-to-channel control, resulting in excellent immunity to short-channel effects …
excellent gate-to-channel control, resulting in excellent immunity to short-channel effects …
Influence of Temperature Fluctuations on the Analog and RF Characteristics of Gate-Engineered High-K Gate Dielectric Stack SOI Fin-FET
The phenomenal advancement and unceasing growth of research in the area of
nanotechnology have resulted to an increase in the effectiveness of gadgets at the …
nanotechnology have resulted to an increase in the effectiveness of gadgets at the …
Effect of Work Function Modulation on Switching Current Ratio For A Dual Metal Gate Junctionless FinFET (DMG-JL FinFET)
This research work presents a new type of transis-tor called the WFMDMG-Junction-less
FinFET, which stands for Dual Metal Gate Junctionless FinFET with workfunction …
FinFET, which stands for Dual Metal Gate Junctionless FinFET with workfunction …
A comparative review on leakage power minimization techniques in SRAM
The fast progression in technology and growing market for portable devices demand ultra-
low power dissipation for longer battery life. In the present-day context, electronic circuit …
low power dissipation for longer battery life. In the present-day context, electronic circuit …