Enabling active nanotechnologies by phase transition: from electronics, photonics to thermotics

C Zheng, RE Simpson, K Tang, Y Ke, A Nemati… - Chemical …, 2022 - ACS Publications
Phase transitions can occur in certain materials such as transition metal oxides (TMOs) and
chalcogenides when there is a change in external conditions such as temperature and …

Emerging phase change memory devices using non-oxide semiconducting glasses

S Agarwal, P Lohia, DK Dwivedi - Journal of Non-Crystalline Solids, 2022 - Elsevier
In the new computing world, phase-change memory (PCM) has recently evolved as a non-
volatile key-enabling technology that has been used as memory storage. PCM has also …

Ultralow–switching current density multilevel phase-change memory on a flexible substrate

AI Khan, A Daus, R Islam, KM Neilson, HR Lee… - Science, 2021 - science.org
Phase-change memory (PCM) is a promising candidate for data storage in flexible
electronics, but its high switching current and power are often drawbacks. In this study, we …

[HTML][HTML] Interface controlled thermal resistances of ultra-thin chalcogenide-based phase change memory devices

K Aryana, JT Gaskins, J Nag, DA Stewart, Z Bai… - Nature …, 2021 - nature.com
Phase change memory (PCM) is a rapidly growing technology that not only offers
advancements in storage-class memories but also enables in-memory data processing to …

Designing glass and crystalline phases of metal–bis (acetamide) networks to promote high optical contrast

M Liu, AH Slavney, S Tao… - Journal of the …, 2022 - ACS Publications
Owing to their high tunability and predictable structures, metal–organic materials offer a
powerful platform to study glass formation and crystallization processes and to design …

[HTML][HTML] In-memory logic operations and neuromorphic computing in non-volatile random access memory

QF Ou, BS Xiong, L Yu, J Wen, L Wang, Y Tong - Materials, 2020 - mdpi.com
Recent progress in the development of artificial intelligence technologies, aided by deep
learning algorithms, has led to an unprecedented revolution in neuromorphic circuits …

Electro-thermal confinement enables improved superlattice phase change memory

AI Khan, H Kwon, ME Chen, M Asheghi… - IEEE Electron …, 2021 - ieeexplore.ieee.org
Large switching current density and resistance drift remain challenges for phase change
memory (PCM) in data storage and neuromorphic computing applications. Here, we address …

[HTML][HTML] Recent developments concerning the sputter growth of chalcogenide-based layered phase-change materials

Y Saito, M Morota, K Makino, J Tominaga… - Materials Science in …, 2021 - Elsevier
This paper reviews recent developments in the sputter growth of chalcogenide thin films for
phase-change memory applications. We focus primarily on the growth of highly oriented Sb …

Two-fold reduction of switching current density in phase change memory using Bi₂Te₃ thermoelectric interfacial layer

AI Khan, H Kwon, R Islam, C Perez… - IEEE Electron …, 2020 - ieeexplore.ieee.org
High switching current density has been a key bottleneck for phase change memory (PCM)
technology. Here, we demonstrate interfacial thermoelectric heating (TEH) as a promising …

Enhancement of thermal stability and device performances through XTe2/TaxSb2Te3-based phase-change heterostructure

TH Kim, KJ Yoo, TH Kim, HJ Lee, AC Khot… - Applied Surface …, 2023 - Elsevier
Phase-change heterostructure (PCH) devices with alternately stacked layers of phase-
change materials (PCMs) and XTe 2-based confinement materials (CMs) have been …