Modeling the electrical characteristics of Schottky contacts in low-dimensional heterostructure devices

R Ragi, MA Romero, B Nabet - IEEE transactions on electron …, 2005 - ieeexplore.ieee.org
This paper deals with the modeling of the electronic characteristics of semiconductor
devices based on Schottky contacts in low-dimensional systems. For the capacitance …

Contribuições para a modelagem de dispositivos semicondutores baseados em contatos Schottky heterodimensionais

RAR Pereira - 2003 - teses.usp.br
Esta tese trata da modelagem das características eletrônicas de dispositivos
semicondutores baseados em contatos Schottky heterodimensionais, definidos como …

Semiconductor component, use of a semiconductor component

R Amirpour - US Patent 11,611,003, 2023 - Google Patents
2020-03-19 Assigned to FRAUNHOFER-GESELLSCHAFT ZUR FORDERUNG DER
ANGEWANDTEN FORSCHUNG EV reassignment FRAUNHOFER-GESELLSCHAFT ZUR …

[图书][B] Gallium Arsenide Based Metal-Semiconductor-Metal Devices and Detectors

EM Gallo - 2010 - search.proquest.com
Each year the creation and refinement of new material growth techniques give rise to novel
material systems for electronic device exploration. A metal-semiconductor-metal (MSM) …