Avalanche multiplication characteristics in a reverse-biased homoepitaxial GaN p–n junction
diode are experimentally investigated at 223–373 K by novel photomultiplication …

We report the use of hydrofluoric acid (HF) as an electrolyte in etching and porosifying GaN.
HF is found to be effective in rendering a wide range of nanoporous morphology, from …

We report the realization of 1 cm 2 hexagonal boron nitride (h-BN) thermal neutron detectors
with an unprecedented detection efficiency of 59%. This was achieved through …

The relaxation of lattice-mismatched strain by deep postetching was systematically
investigated for InGaN/GaN multiple quantum wells (MQWs). A planar heterojunction wafer …

We report steady-state and time-resolved photoluminescence (TRPL) measurements on
individual GaN nanowires (⁠ 6–20 μ m in length, 30–940 nm in diameter) grown by a …

Photoluminescence measurements on high-quality (In, Ga) N quantum wells reveal that
carriers diffuse laterally to long distances at room temperature, up to tens of microns. This …

The effects of an intrinsic nonpolar surface on internal quantum efficiency (IQE) are
numerically investigated for gallium nitride (GaN)‐based micro‐light emitting‐diodes (μ …

We investigate the impact of threading dislocations with an edge component (a or a+ c type)
on carrier recombination and diffusion in Ga N (0001) layers close to the surface as well as …

We theoretically analyze the contrast observed at the outcrop of a threading dislocation at
the GaN (0 0 0 1) surface in cathodoluminescence and electron-beam induced current …

A key issue in a single photon source is fast and efficient generation of a single photon flux
with high light extraction efficiency. Significant progress toward high-efficiency single photon …