Axial p–n and p–i–n junctions in GaAs 0.7 P 0.3 nanowires are demonstrated and analyzed
using electron beam induced current microscopy. Organized self-catalyzed nanowire arrays …

Flexible optoelectronic structures are required in a wide range of applications. Large scale
modified silicone-embedded n-GaP nanowire arrays of a record 6 µm thin membranes were …

III-V materials have gained great interest in materials science community since a few
decades due to their versatile properties. Experimenting with the crystal phase, dimensional …

We report on the growth, structural, and optical properties of GaAs/GaAsPBi core–shell
nanowires (NWs) synthesized by molecular beam epitaxy (MBE). The structure presents …

The electrical properties of passivated and non-passivated axial p–i–n junctions in GaAsP
nanowires are investigated using electron-beam induced current microscopy. Organized self …

GaAsBi nanowires (NWs) are promising for optoelectronic applications in the near-and mid-
infrared wavelengths due to the optical properties of the Bi-containing compound and the …

The underwater photoelectric detection equipment mainly uses 532 nm laser as the light
source, but the corresponding photocathodes like Na2KSbCs, GaAs and GaAsP have a …

Crystal phase engineering is an exciting pathway to enhance the properties of conventional
semiconductors. Metastable SiGe presents a direct band gap well suited for optical devices …

Nanowires (NW) epitaxially grown on Si substrate are efficient light absorbers and allow to
integrate high-quality III-V materials on Si by preventing defects induced by the lattice …

Malgré le potentiel des nanofils (NFs) semi-conducteurs pour des applications
photovoltaïques, la performance des cellules solaires à NFs reste toujours en deçà de celle …