Enhancing the mechanical strength of - with alloying
Y Yan, C Li, N Xia, T Deng, H Zhang, D Yang - Physical Review Applied, 2024 - APS
β-Ga 2 O 3 is a promising ultrawide-bandgap semiconductor material for power electronics
and optical applications. However, its low hardness and cleavage nature pose major …
and optical applications. However, its low hardness and cleavage nature pose major …
Design of a W-band High-PAE Class A & AB Power Amplifier in 150 nm GaAs Technology
JY Lee, D Wu, X Guo, M Ariannejad… - … on Electrical and …, 2024 - Springer
Nanometer scale power amplifiers (PA) at sub-THz suffer from severe parasitic effects that
lead to experience limited maximum frequency and reduced power performance at the …
lead to experience limited maximum frequency and reduced power performance at the …
Drain Current Characteristics of 6 H-SiC MESFET with Un-Doped and Recessed Area under the Gate: A Simulation Study
In this paper, we have investigated the impact of the un-doped and recessed gate structure
on the performance of the 6 H-SiC Metal Semiconductor Field Effect Transistor. The …
on the performance of the 6 H-SiC Metal Semiconductor Field Effect Transistor. The …
Influence of High-k Dielectric Materials on AlGaN/AlInGaN/GaN MOS-HEMT Grown on β-Ga2O3Substrate: Numerical Study
N Amina, M Zitouni, T Zineeddine - 2024 2nd International …, 2024 - ieeexplore.ieee.org
In this work, we have analyzed the influence of high-k dielectric materials including silicon
nitride (Si_3N_4), aluminum oxide (Al_2O_3), hafnium oxide (HfO_2), and titanium dioxide …
nitride (Si_3N_4), aluminum oxide (Al_2O_3), hafnium oxide (HfO_2), and titanium dioxide …