Evolution of microstructure and phase in amorphous, protocrystalline, and microcrystalline silicon studied by real time spectroscopic ellipsometry
RW Collins, AS Ferlauto, GM Ferreira, C Chen… - Solar energy materials …, 2003 - Elsevier
Real time spectroscopic ellipsometry has been applied to develop deposition phase
diagrams that can guide the fabrication of hydrogenated silicon (Si: H) thin films at low …
diagrams that can guide the fabrication of hydrogenated silicon (Si: H) thin films at low …
Advances in plasma-enhanced chemical vapor deposition of silicon films at low temperatures
RW Collins, AS Ferlauto - Current Opinion in Solid State and Materials …, 2002 - Elsevier
The properties of silicon films prepared by plasma-enhanced chemical vapor deposition
(PECVD) at low temperatures (< 400° C) are controlled by the physical and chemical …
(PECVD) at low temperatures (< 400° C) are controlled by the physical and chemical …
Amorphous silicon based solar cells
X Deng, EA Schiff - 2003 - surface.syr.edu
Crystalline semiconductors are very well known, including silicon (the basis of the integrated
circuits used in modern electronics), Ge (the material of the first transistor), GaAs and the …
circuits used in modern electronics), Ge (the material of the first transistor), GaAs and the …
High quality amorphous silicon materials and cells grown with hydrogen dilution
S Guha, J Yang, A Banerjee, B Yan, K Lord - Solar energy materials and …, 2003 - Elsevier
Hydrogen dilution of the active gas during deposition has been found to be a very effective
way to improve the quality of amorphous silicon-based materials and solar cells. With …
way to improve the quality of amorphous silicon-based materials and solar cells. With …
Highly stable amorphous-silicon thin-film transistors on clear plastic
B Hekmatshoar, KH Cherenack, AZ Kattamis… - Applied Physics …, 2008 - pubs.aip.org
Hydrogenated amorphous-silicon (a-Si: H) thin-film transistors (TFTs) have been fabricated
on clear plastic with highly stable threshold voltages. When operated at a gate field of 2.5× …
on clear plastic with highly stable threshold voltages. When operated at a gate field of 2.5× …
High-efficiency heterojunction solar cells on crystalline germanium substrates
B Hekmatshoar, D Shahrjerdi, M Hopstaken… - Applied Physics …, 2012 - pubs.aip.org
We report stand-alone heterojunction (HJ) solar cells with conversion efficiencies of 5.9%
and 7.2% on n-type and p-type crystalline germanium (c-Ge) substrates, respectively. The …
and 7.2% on n-type and p-type crystalline germanium (c-Ge) substrates, respectively. The …
Low-temperature epitaxy of compressively strained silicon directly on silicon substrates
D Shahrjerdi, B Hekmatshoar, SW Bedell… - Journal of Electronic …, 2012 - Springer
We report epitaxial growth of compressively strained silicon directly on (100) silicon
substrates by plasma-enhanced chemical vapor deposition. The silicon epitaxy was …
substrates by plasma-enhanced chemical vapor deposition. The silicon epitaxy was …
Hydrogen plasma induced microcrystallization in layer-by-layer growth scheme
D Das, M Jana - Solar energy materials and solar cells, 2004 - Elsevier
Significant improvement in the microcrystallization in Si: H network has been demonstrated
by introducing layer-by-layer (LBL) growth and H-plasma treatment on the stacking layers …
by introducing layer-by-layer (LBL) growth and H-plasma treatment on the stacking layers …
Hydrogen bonding and structural order in hydrogenated amorphous silicon prepared with hydrogen-diluted silane
P Danesh, B Pantchev, K Antonova… - Journal of Physics D …, 2003 - iopscience.iop.org
A study of the structural development of hydrogenated amorphous silicon (a-Si: H) during
plasma-enhanced chemical vapour deposition with hydrogen-diluted silane has been …
plasma-enhanced chemical vapour deposition with hydrogen-diluted silane has been …
Industrial‐Scale Preparation of Nanocrystalline n‐Type Silicon Oxide Front Contacts Using N2O as an Oxygen Source for High‐Efficiency Silicon Heterojunction …
CW Peng, S Zou, C He, D Zhang, H Wu… - Progress in …, 2024 - Wiley Online Library
The advantage of employing an n‐type hydrogenated nanocrystalline silicon oxide (nc‐
SiOx: H) layer as the front surface field (FSF) in silicon heterojunction (SHJ) solar cells is due …
SiOx: H) layer as the front surface field (FSF) in silicon heterojunction (SHJ) solar cells is due …