Tailoring optical properties of hydrothermally synthesized SnMnSe nanocubes for optoelectronic and dielectric applications

A Parida, S Senapati, GK Pradhan, R Naik - Journal of Alloys and …, 2024 - Elsevier
In the current paper, we investigate the optical and dielectric properties of the SnMnSe
nanocubes. The Sn 0.5+ x Mn 0.5− x Se (x= 0.375, 0.250, 0.125, 0) samples are prepared by …

Effect of annealing on structural, morphological and optical properties of InSe thin films

H Singh, S Kumari, P Singh, A Kumar… - Journal of Materials …, 2022 - Springer
Indium selenide (InSe), a member of chalcogenide semiconductors, has attracted immense
attention due to its wide range of technological applications in solar cells, data storage …

Effect of Bi addition on the physical and optical properties of Ge20Te74-xSb6Bix (x= 2, 4, 6, 8, 10) thin films deposited via thermal evaporation

P Kumar, SK Tripathi, I Sharma - Journal of Alloys and Compounds, 2018 - Elsevier
Chalcogenide materials in different forms (bulk, thin film, nanocrystals etc.) are finding
applications in various sectors eg in infrared optics for communication, imaging, limiting …

Study of linear and non-linear optical properties of In–Se doped chalcogenide semiconducting glasses

K Yadav, D Mohan, S Sanghi - Journal of Materials Science: Materials in …, 2022 - Springer
The present work focuses on the various linear and non-linear optical properties of antimony
(Sb) and gallium (Ga)(both 0.1 at.%) doped Indium selenide chalcogenide glass …

Study of optical bandgap and other related optical properties in amorphous thin films of some optical materials of Se-Te-Sn-Ag system

HE Atyia, SS Fouad, SK Pal, A Srivastava… - Optics & Laser …, 2022 - Elsevier
Recently, the STSA samples of Se 78-x Te 20 Sn 2 Ag x (x= 0, 2, 4, 6) system were
synthesized by the classical melt-quench route to get them in bulk form in our laboratory for …

Thermal stability improvement and crystallization behavior of Ag doped Ge2Sb2Te5 phase change materials

P Singh, AP Singh, A Thakur - Journal of Materials Science: Materials in …, 2019 - Springer
Abstract Ge 2 Sb 2 Te 5 is a potential candidate for various technological applications
because of its splendid set of properties.(Ge 2 Sb 2 Te 5) 100− x Ag x (x= 0 and 3) bulk …

Fabrication of columnar orthorhombic AgTe via anomalous diffusion

H Toyoda, Y Yin, K Tsukamoto, T Nakaoka - Applied Physics A, 2024 - Springer
We report the growth of columnar structures of orthorhombic AgTe by radio-frequency (RF)
magnetron sputtering at room temperature. The structures were formed spontaneously by …

[HTML][HTML] Single-crystalline Ag2Te nanorods prepared by room temperature sputtering of GeTe

K Nakaya, T Nakaoka - SN Applied Sciences, 2020 - Springer
We report a facile, single-crystalline Ag 2 Te nanorod formation based on electrochemical
diffusion of Ag. The nanorods were grown non-epitaxially by sputtering deposition of GeTe …

Direct measurement of “ready-made” cations in a Ge2Sb3.4Te6.2 film

Y Imanishi, T Nakaoka - Journal of Materials Science, 2019 - Springer
We have successfully observed Faradaic current in cyclic voltammetry of an amorphous Ge
2 Sb 3.4 Te 6.2 film with Ag electrodes. The Faradaic current peak was attributed to a non …

Laser irradiation-induced structural, microstructural and optical properties change in Bi-doped As40Se60 thin films

M Behera, NC Mishra, R Naik - Phase Transitions, 2020 - Taylor & Francis
The laser irradiation with band gap light of thermally evaporated As40Se55Bi5 and
As40Se45Bi15 thin films was found to be accompanied by structural changes which in turn …