3975 Fair Ridge Drive, Suite 20 North Sist E. in which contact resistance EWSA the Fairfax,
VA 22033 (US) oxide semiconductor layer and source and drain electrode layers is reduced …

A manufacturing method of the present invention includes the steps of forming a first
conductive layer which functions as a gate electrode overa Substrate; forming a first …

Embodiments disclosed herein generally relate to TFTs and methods of fabricating the TFTs.
In TFTs, the active channel carries the current between the source and drain electrodes. By …

5,625,199 5,668,663 5,683,537 5,700,699 5,716.480 5,720,826 5,731,856 5,993,594
6,150,668 6,153,013 6,153,893 6,159,763 6,180,870 6,228,236 6,238,527 6,329,269 …

A semiconductor device is manufactured using a transistor in which an oxide semiconductor
is included in a channel region and variation in electric characteristics due to a short …

Embodiments of the present invention generally include TFTs and methods for their
manufacture. The gate dielectric layer in the TFT may affect the threshold voltage of the TFT …

5,571,749 5,620,523 5,625,199 5,668,663 5,683,537 5,700,699 5,716.480 5,720,826
5,731,856 5,993,594 6,150,668 6,153,013 6,153,893 6,159,763 6,180,870 6,228,236 …

According to example embodiments, a semiconductor mate rial may include Zinc, nitrogen,
and fluorine. The semicon ductor material may further include oxygen. The semicon ductor …

5,620,523 5,668,663 5,683,537 5,700,699 5,716.480 5,720,826 5,731,856 5,993,594
6,153,013 6,153,893 6,159,763 6,166,319 6,180,870 6,228,236 6,238,527 6,329,269 …

An object is to provide a semiconductor device including an oxynitride semiconductor whose
carrier density is controlled. By introducing controlled nitrogen into an oxide semicon ductor …