A review of SiC power module packaging: Layout, material system and integration
Silicon-Carbide (SiC) devices with superior performance over traditional silicon power
devices have become the prime candidates for future high-performance power electronics …
devices have become the prime candidates for future high-performance power electronics …
Parasitic capacitive couplings in medium voltage power electronic systems: An overview
Recent developments within the field of medium voltage wide-bandgap semiconductor
devices are drawing attention from both researchers and industries due to the demanding …
devices are drawing attention from both researchers and industries due to the demanding …
A fast-switching integrated full-bridge power module based on GaN eHEMT devices
AB Jørgensen, S Bęczkowski… - … on Power Electronics, 2018 - ieeexplore.ieee.org
New packaging solutions and power module structures are required to fully utilize the
benefits of emerging commercially available wide bandgap semiconductor devices …
benefits of emerging commercially available wide bandgap semiconductor devices …
An SiC-based half-bridge module with an improved hybrid packaging method for high power density applications
SiC devices have the potential to structure high power density converters; however, SiC
devices have high di/dt during switching. Therefore, the parasitic inductances in the power …
devices have high di/dt during switching. Therefore, the parasitic inductances in the power …
Modeling and validation of common-mode emissions in wide bandgap-based converter structures
AN Lemmon, AD Brovont, CD New… - … on Power Electronics, 2020 - ieeexplore.ieee.org
Modern power converters designed with wide band-gap (WBG) semiconductors are known
to generate substantial conducted electromagnetic interference (EMI) as a side effect of high …
to generate substantial conducted electromagnetic interference (EMI) as a side effect of high …
Optimized Power Modules for Silicon Carbide mosfet
G Regnat, PO Jeannin, D Frey… - IEEE Transactions …, 2017 - ieeexplore.ieee.org
A new 3-D power module dedicated to SiC mosfet is presented. It is based on printed circuit
board embedded die technology and is compared with a standard power module. After …
board embedded die technology and is compared with a standard power module. After …
[HTML][HTML] Printed circuit board embedded power semiconductors: A technology review
T Huesgen - Power Electronic Devices and Components, 2022 - Elsevier
Embedding power semiconductor devices into printed circuit boards (PCB) provides several
benefits compared to conventional packaging technologies. Integrating the semiconductor …
benefits compared to conventional packaging technologies. Integrating the semiconductor …
Overview of digital design and finite-element analysis in modern power electronic packaging
AB Jørgensen, S Munk-Nielsen… - IEEE Transactions on …, 2020 - ieeexplore.ieee.org
Wide band gap (WBG) semiconductors require packaging with reduced parasitic inductance
and capacitance. To achieve this, new packaging solutions are proposed that increase …
and capacitance. To achieve this, new packaging solutions are proposed that increase …
Analysis and cancellation of leakage current through power module baseplate capacitance
AD Brovont, AN Lemmon, C New… - … on Power Electronics, 2019 - ieeexplore.ieee.org
The fast edge rates achievable by wide-bandgap semiconductors can produce significant
common-mode (CM) leakage currents through the baseplates of encompassing power …
common-mode (CM) leakage currents through the baseplates of encompassing power …
Reduction of parasitic capacitance in 10 kV SiC MOSFET power modules using 3D FEM
AB Jørgensen, N Christensen, DN Dalal… - 2017 19th European …, 2017 - ieeexplore.ieee.org
The benefits of emerging wide-band gap semiconductors can only be utilized if the
semiconductor is properly packaged. Capacitive coupling in the package causes …
semiconductor is properly packaged. Capacitive coupling in the package causes …